DUAL 50V NPN & 40V PNP LOW SATURATION TRANSISTOR COMBINATION

Features and Benefits NPN Transistor • BVCEO > 50V • IC = 4A Continuous Collector Current • Low Saturation Voltage (100mV max @ 1A) • RSAT = 68mΩ for a low equivalent On-Resistance PNP Transistor • BVCEO > -40V • IC = -3A Continuous Collector Current • Low Saturation

DUAL 50V NPN & 40V PNP LOW SATURATION TRANSISTOR COMBINATION

Features and Benefits NPN Transistor • BVCEO > 50V • IC = 4A Continuous Collector Current • Low Saturation Voltage (100mV max @ 1A) • RSAT = 68mΩ for a low equivalent On-Resistance PNP Transistor • BVCEO > -40V • IC = -3A Continuous Collector Current • Low Saturation

DUAL 50V NPN & 40V PNP LOW SATURATION TRANSISTOR COMBINATION

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Customer Specification

Construction 1) Component 1 1 X 1 HOOKUP a) Conductor 10 (105/30) AWG Tinned Copper 0.120 b) Insulation 0.012 Wall, Nom. MPPE 0.144+/- 0.002 (1) Print ALPHA WIRE ECOWIRE TM 10 AWG E163869-DB RU AWM 11028 105C 600V VW-1 --- CRU AWM I A/B 105C 600V FT1 CE ROHS (2) Color(s) WHITE, BLAC

High Current Toroid Inductors (with header)

Special Features • Low radiation • High current capacity • High inductance • Mounted on UL 94V-0 rated header • Fixed pins for easy PCB insertion • Operating temperature: -55 to +105 °C

Customer Specification

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RF AMPLIFIER MODEL

文件：73.25 Kbytes Page：1 Pages

E6706G 1xEV-DO Lab Application

文件：466.49 Kbytes Page：16 Pages