位置：首页 > IC中文资料第224页 > ZXT13P20DE6TC
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
ZXT13P20DE6TC | 20V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO=-20V; RSAT = 47m ; IC= -3.5A DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give extremely low on state losses. This makes it ideal for high efficiency, low voltage switching appl | Zetex |   | |
ZXT13P20DE6TC | 20V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO=-20V; RSAT = 47m ; IC= -3.5A DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give extremely low on state losses. This makes it ideal for high efficiency, low voltage switch | DIODES 美台半导体 | | |
ZXT13P20DE6TC | 封装/外壳：SOT-23-6 包装：卷带（TR） 描述：TRANS PNP 20V 4A SOT26 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | DIODES 美台半导体 | | |
20V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO=-20V; RSAT = 47m ; IC= -3.5A DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give extremely low on state losses. This makes it ideal for high efficiency, low voltage switch | DIODES 美台半导体 | | ||
20V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO=-20V; RSAT = 47m ; IC= -3.5A DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give extremely low on state losses. This makes it ideal for high efficiency, low voltage switching appl | Zetex | | ||
20V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO=-20V; RSAT = 47m ; IC= -3.5A DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give extremely low on state losses. This makes it ideal for high efficiency, low voltage switching appl | Zetex | | ||
20V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO=-20V; RSAT = 47m ; IC= -3.5A DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give extremely low on state losses. This makes it ideal for high efficiency, low voltage switch | DIODES 美台半导体 | | ||
PNP LOW SATURATION SWITCHING TRANSISTOR 文件：376.89 Kbytes Page：7 Pages | DIODES 美台半导体 | |
ZXT13P20DE6TC产品属性
- 类型
描述
- 型号
ZXT13P20DE6TC
- 功能描述
两极晶体管 - BJT 20V PNP SuperSOT4
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
PNP 集电极—基极电压
- VCBO
集电极—发射极最大电压
- VCEO
- 40 V 发射极 - 基极电压
- VEBO
- 6 V
- 增益带宽产品fT
直流集电极/Base Gain hfe
- Min
100 A
- 安装风格
SMD/SMT
- 封装/箱体
PowerFLAT 2 x 2
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
DIODES/美台 |
20+ |
SMD |
88800 |
DIODES原装优势主营型号-可开原型号增税票 |
|||
DIODES/美台 |
25+ |
SOT26 |
880000 |
明嘉莱只做原装正品现货 |
|||
DIODES/ZETEX |
23+ |
原厂封装 |
13528 |
振宏微原装正品,假一罚百 |
|||
DIODES/美台 |
24+ |
SOT-26 |
25000 |
原装正品公司现货,假一赔十! |
|||
ZETEX |
24+ |
SOT-23-6 |
1450 |
只做原装正品 |
|||
DIODES/美台 |
21+ |
SOT-26 |
8080 |
只做原装,质量保证 |
|||
ZETEX |
25+ |
SOT23-6 |
4500 |
全新原装、诚信经营、公司现货销售 |
|||
ZETEX |
20+ |
SOT23-6 |
1000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
ZETEX |
24+ |
SOT23-6 |
3000 |
||||
ZETEX |
23+ |
SOT23-6 |
6150 |
原装正品,假一罚十 |
ZXT13P20DE6TC芯片相关品牌
ZXT13P20DE6TC规格书下载地址
ZXT13P20DE6TC参数引脚图相关
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瀚佳科技(深圳)有限公司 专业工厂一站式全套配单服务
2019-1-13
DdatasheetPDF页码索引
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