位置：首页 > IC中文资料第224页 > ZXT13P20DE6TC
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
ZXT13P20DE6TC | 20V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO=-20V; RSAT = 47m ; IC= -3.5A DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give extremely low on state losses. This makes it ideal for high efficiency, low voltage switching appl | ZETEX |   | |
ZXT13P20DE6TC | 20V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO=-20V; RSAT = 47m ; IC= -3.5A DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give extremely low on state losses. This makes it ideal for high efficiency, low voltage switch | DIODES 美台半导体 | | |
ZXT13P20DE6TC | 封装/外壳：SOT-23-6 包装：卷带（TR） 描述：TRANS PNP 20V 4A SOT26 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | DIODES 美台半导体 | | |
20V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO=-20V; RSAT = 47m ; IC= -3.5A DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give extremely low on state losses. This makes it ideal for high efficiency, low voltage switch | DIODES 美台半导体 | | ||
20V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO=-20V; RSAT = 47m ; IC= -3.5A DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give extremely low on state losses. This makes it ideal for high efficiency, low voltage switching appl | ZETEX | | ||
20V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO=-20V; RSAT = 47m ; IC= -3.5A DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give extremely low on state losses. This makes it ideal for high efficiency, low voltage switching appl | ZETEX | | ||
20V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO=-20V; RSAT = 47m ; IC= -3.5A DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give extremely low on state losses. This makes it ideal for high efficiency, low voltage switch | DIODES 美台半导体 | | ||
PNP LOW SATURATION SWITCHING TRANSISTOR 文件：376.89 Kbytes Page：7 Pages | DIODES 美台半导体 | |
ZXT13P20DE6TC产品属性
- 类型
描述
- 型号
ZXT13P20DE6TC
- 功能描述
两极晶体管 - BJT 20V PNP SuperSOT4
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
PNP 集电极—基极电压
- VCBO
集电极—发射极最大电压
- VCEO
- 40 V 发射极 - 基极电压
- VEBO
- 6 V
- 增益带宽产品fT
直流集电极/Base Gain hfe
- Min
100 A
- 安装风格
SMD/SMT
- 封装/箱体
PowerFLAT 2 x 2
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
DIODES/美台 |
22 |
SOT26 |
30000 |
十七年VIP会员,诚信经营，一手货源，原装正品可零售！ |
|||
ZETEX |
2016+ |
SOT23-6 |
3000 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
原装ZETEX |
19+ |
SOT23-6 |
20000 |
原装现货假一罚十 |
|||
Diodes Incorporated |
25+ |
SOT-26 |
6843 |
样件支持,可原厂排单订货! |
|||
Diodes Incorporated |
25+ |
SOT-26 |
6895 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
|||
ZETEX |
20+ |
SOT23-6 |
1000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
DIODES/美台 |
25+ |
SOT-26 |
25000 |
原装正品公司现货,假一赔十! |
|||
DIODES/ZETEX |
23+ |
原厂封装 |
13528 |
振宏微原装正品,假一罚百 |
|||
Diodes(美台) |
23+ |
标准封装 |
12000 |
正规渠道,只有原装! |
|||
ZETEX |
24+ |
SOT23-6 |
5989 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
ZXT13P20DE6TC规格书下载地址
ZXT13P20DE6TC参数引脚图相关
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2019-1-13
DdatasheetPDF页码索引
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