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ZXMN6A08G价格
参考价格：￥1.4807
型号：ZXMN6A08GTA 品牌：Diodes 备注：这里有ZXMN6A08G多少钱，2025年最近7天走势，今日出价，今日竞价，ZXMN6A08G批发/采购报价，ZXMN6A08G行情走势销售排行榜，ZXMN6A08G报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
ZXMN6A08G | 60V SOT223 N-channel enhancement mode MOSFET Description This new generation trench MOSFET from Zetex features a unique structure combining the benefits of low on-resistance and fast switching, making it ideal for high efficiency power management applications. Features • Low on-resistance • Fast switching speed • Low thres | Zetex |   | |
ZXMN6A08G | 60V SOT223 N-channel enhancement mode MOSFET Description This new generation trench MOSFET from Zetex features a unique structure combining the benefits of low on-resistance and fast switching, making it ideal for high efficiency power management applications. Features • Low on-resistance • Fast switching speed • Low thres | DIODES 美台半导体 | | |
ZXMN6A08G | N-CHANNEL ENHANCEMENT MODE MOSFET | DIODES 美台半导体 | | |
60V SOT223 N-channel enhancement mode MOSFET Description This new generation trench MOSFET from Zetex features a unique structure combining the benefits of low on-resistance and fast switching, making it ideal for high efficiency power management applications. Features • Low on-resistance • Fast switching speed • Low thres | Zetex | | ||
60V SOT223 N-CHANNEL ENHANCEMENT MODE MOSFET Description and Applications This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in: BLDC Motors DC-DC Converters Load Switch Features and Benefits Low On-Resistance Fast S | DIODES 美台半导体 | | ||
60V SOT223 N-CHANNEL ENHANCEMENT MODE MOSFET Description and Applications This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in: BLDC Motors DC-DC Converters Load Switch Features and Benefits Low On-Resistance Fast S | DIODES 美台半导体 | | ||
60V SOT223 N-CHANNEL ENHANCEMENT MODE MOSFET Description and Applications This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in: BLDC Motors DC-DC Converters Load Switch Features and Benefits Low On-Resistance Fast S | DIODES 美台半导体 | | ||
60V SOT223 N-channel enhancement mode MOSFET Description This new generation trench MOSFET from Zetex features a unique structure combining the benefits of low on-resistance and fast switching, making it ideal for high efficiency power management applications. Features • Low on-resistance • Fast switching speed • Low thres | Zetex | | ||
60V SOT223 N-channel enhancement mode MOSFET Description This new generation trench MOSFET from Zetex features a unique structure combining the benefits of low on-resistance and fast switching, making it ideal for high efficiency power management applications. Features • Low on-resistance • Fast switching speed • Low thres | DIODES 美台半导体 | | ||
60V SOT223 N-channel enhancement mode MOSFET Description This new generation trench MOSFET from Zetex features a unique structure combining the benefits of low on-resistance and fast switching, making it ideal for high efficiency power management applications. Features • Low on-resistance • Fast switching speed • Low thres | Zetex | | ||
60V SOT223 N-channel enhancement mode MOSFET Description This new generation trench MOSFET from Zetex features a unique structure combining the benefits of low on-resistance and fast switching, making it ideal for high efficiency power management applications. Features • Low on-resistance • Fast switching speed • Low thres | DIODES 美台半导体 | | ||
60V SOT223 N-channel enhancement mode MOSFET 文件：471.44 Kbytes Page：7 Pages | DIODES 美台半导体 | | ||
60V SOT223 N-channel enhancement mode MOSFET | DIODES 美台半导体 | | ||
N-Channel 60-V (D-S) MOSFET 文件：1.09006 Mbytes Page：8 Pages | VBSEMI 微碧半导体 | | ||
General Purpose Silicon Rectifiers Voltage: 50 to 1000 V Current: 6.0 A RoHS Device Features - Low cost construction. - Diffused Junction. - Low forward voltage drop. - High current capability. | COMCHIP 典琦 | | ||
PLASTIC SILICON RECTIFIERS 文件：126.83 Kbytes Page：3 Pages | HY 虹扬科技 | |
ZXMN6A08G产品属性
- 类型
描述
- 型号
ZXMN6A08G
- 功能描述
MOSFET 60V 3.8A N-Channel MOSFET
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Diodes Incorporated |
21+ |
SOT-223 |
1000 |
进口原装!长期供应!绝对优势价格(诚信经营)!! |
|||
DIODES美台 |
24+ |
SOT-223 |
1365 |
市场最低 原装现货 假一罚百 可开原型号 |
|||
DIODES/美台 |
2019+ |
SOT223 |
78550 |
原厂渠道 可含税出货 |
|||
DIODES/美台 |
23+ |
NA |
12730 |
原装正品代理渠道价格优势 |
|||
DIODES/美台 |
2450+ |
SOT-223 |
9850 |
只做原装正品现货或订货假一赔十! |
|||
DIODES |
25+ |
SOT223 |
30000 |
原厂原装,价格优势 |
|||
DIODES/美台 |
24+ |
SOT-223 |
9600 |
原装现货,优势供应,支持实单! |
|||
DIODES/美台 |
23+ |
SOT-223 |
100586 |
全新原厂原装正品现货,可提供技术支持、样品免费! |
|||
DIODES/美台 |
20+ |
SOT-223 |
32500 |
现货很近!原厂很远!只做原装 |
|||
DIODES/美台 |
2447 |
SOT26 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
ZXMN6A08G规格书下载地址
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DdatasheetPDF页码索引
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