ZXMN6A08GTA价格

参考价格:¥1.4807

型号:ZXMN6A08GTA 品牌:Diodes 备注:这里有ZXMN6A08GTA多少钱,2025年最近7天走势,今日出价,今日竞价,ZXMN6A08GTA批发/采购报价,ZXMN6A08GTA行情走势销售排行榜,ZXMN6A08GTA报价。
型号 功能描述 生产厂家&企业 LOGO 操作
ZXMN6A08GTA

60V SOT223 N-channel enhancement mode MOSFET

Description This new generation trench MOSFET from Zetex features a unique structure combining the benefits of low on-resistance and fast switching, making it ideal for high efficiency power management applications. Features • Low on-resistance • Fast switching speed • Low thres

Zetex

ZXMN6A08GTA

60V SOT223 N-channel enhancement mode MOSFET

Description This new generation trench MOSFET from Zetex features a unique structure combining the benefits of low on-resistance and fast switching, making it ideal for high efficiency power management applications. Features • Low on-resistance • Fast switching speed • Low thres

DIODES

美台半导体

ZXMN6A08GTA

N-Channel 60-V (D-S) MOSFET

文件:1.09006 Mbytes Page:8 Pages

VBSEMI

微碧半导体

60V SOT223 N-channel enhancement mode MOSFET

Description This new generation trench MOSFET from Zetex features a unique structure combining the benefits of low on-resistance and fast switching, making it ideal for high efficiency power management applications. Features • Low on-resistance • Fast switching speed • Low thres

Zetex

60V SOT223 N-channel enhancement mode MOSFET

Description This new generation trench MOSFET from Zetex features a unique structure combining the benefits of low on-resistance and fast switching, making it ideal for high efficiency power management applications. Features • Low on-resistance • Fast switching speed • Low thres

DIODES

美台半导体

60V SOT223 N-channel enhancement mode MOSFET

Description This new generation trench MOSFET from Zetex features a unique structure combining the benefits of low on-resistance and fast switching, making it ideal for high efficiency power management applications. Features • Low on-resistance • Fast switching speed • Low thres

Zetex

General Purpose Silicon Rectifiers

Voltage: 50 to 1000 V Current: 6.0 A RoHS Device Features - Low cost construction. - Diffused Junction. - Low forward voltage drop. - High current capability.

COMCHIP

典琦

PLASTIC SILICON RECTIFIERS

文件:126.83 Kbytes Page:3 Pages

HY

ZXMN6A08GTA产品属性

  • 类型

    描述

  • 型号

    ZXMN6A08GTA

  • 功能描述

    MOSFET 60V 3.8A N-Channel MOSFET

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2025-8-14 11:26:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
DIODES
2018+
SOT223
11256
只做进口原装正品!假一赔十!
DIODES/美台
23+
SOT-223-3
8435
原装正品现货假一赔十
DIODES/美台
23+
SOT-223
30000
全新原装现货,价格优势
DIODES/美台
22+
SOT223
12245
现货,原厂原装假一罚十!
DIODES/美台
24+
SOT-223
9600
原装现货,优势供应,支持实单!
ZETEX
24+
SOT223
8000
只做自己库存 全新原装进口正品假一赔百 可开13%增
24+
N/A
64000
一级代理-主营优势-实惠价格-不悔选择
DIODES/美台
21+
SOT223
1000
DIODES/美台
24+
SOT223
8950
BOM配单专家,发货快,价格低
ZETEX/DIODES
1925+
SOT-223
12500
原装现货价格优势可供更多可出样

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