NPN SILICON PLANAR MEDIUM POWER(DARLINGTON TRANSISTORS)

FEATURES * 120 Volt VCEO * 1 Amp continuous current * Gain of 2K at IC=1 Amp * Ptot= 1 Watt

NPN SILICON PLANAR MEDIUM POWER

FEATURES * 120 Volt VCEO * 1 Amp continuous current * Gain of 2K at IC=1 Amp * Ptot= 1 Watt

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage -V(BR)CEO= 120V(Min) ·Collector-Emitter Saturation Voltage -VCE(sat)= 1.5V(Max) @IC= 1A APPLICATIONS ·Designed for power amplifier,high speed switching and regulated power supply applications.

封装/外壳：E-Line-3 包装：散装 描述：TRANS NPN DARL 120V 1A E-LINE 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

NPN, 120V, 1A, E-Line

封装/外壳：E-Line-3，成型引线 包装：卷带（TR） 描述：TRANS NPN DARL 120V 1A E-LINE 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

TREK 605A

PRODUCT HIGHLIGHTS  Line and load regulation better than 0.002%  Automatic current limit feature to protect the instrument from output short circuits or overloads  Remote high voltage on/off feature ideal for use with automated or computercontrolled systems

3M??Scotch짰 Transparent Film Tape

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Two Terminal Metal Element Current Sense

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DC axial compact fan

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Two Terminal Metal Element Current Sense

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