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XT0145P

ALL DIMENSIONS IN MM [INCH]

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E-SWITCH

SMD Schottky Barrier Diode

Io = 100 mA VR = 45 Volts Features Designed for mounting on small surface. Extremely thin/leadless package. Low leakage current (IR=0.1uA typ. @VR=10V). Majority carrier conduction. Mechanical data Case: 1005 (2512) Standard package , molded plastic. Terminals: Gold plat

COMCHIP

典琦

SMD Schottky Barrier Diode

Io = 100 mA VR = 45 Volts Features Designed for mounting on small surface. Extremely thin/leadless package. Low leakage current. (IR=0.1uA typ.@VR=10V) Majority carrier conduction. Mechanical data Case: 1005(2512) standard package, molded plastic. Te

COMCHIP

典琦

SMD Schottky Barrier Diode

Io = 100mA VR = 45 Volts Features Designed for mounting on small surface Extremely thin package Low stored charge Majority carrier conduction Mechanical data Case: 1206(3216)Standard package, molded plastic Terminals: Solder plated, solderable per MIL-STD-750, method 202

COMCHIP

典琦

SMD Schottky Barrier Diode

Io = 100mA VR = 45 Volts Features Designed for mounting on small surface Extremely thin package Low stored charge Majority carrier conduction Mechanical data Case: 0805(2012) Standard package, molded plastic. Terminals: Solder plated, solderable per MIL-STD-750, method 2

COMCHIP

典琦

SMD Schottky Barrier Diode

Io = 100 mA VR = 45 Volts Features Designed for mounting on small surface. Extremely thin/leadless package. Low leakage current. (IR=0.1uA typ.@VR=10V) Majority carrier conduction. Mechanical data Case: 0603(1608) standard package, molded plastic. Te

COMCHIP

典琦

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