低噪声放大器芯片

XN255是一款应用于GPS接收机的低噪声放大器芯片，具有高增益低噪声 的特性，在增益为19dB的条件下，噪声系数达到了 0.8dB。该芯片应用于GPS接收机前端，可有效提高 接收机的接收灵敏度,扩大接收机的应用范围。 •电源电压+2.7V～+3.3V\n•0.8dB超低噪声系数\n•内部50Ω输出匹配电路\n•仅4.1mA消耗电流\n•省电模式( SHDN )选择\n•1.5-kV HBM ESD保护\n•采用6-pin 1.50mm x 1.00mm x 0.75mm LGA的小型封装;

PNP video transistors

DESCRIPTION PNP video transistor in a SOT128B (TO-202) plastic package. NPN complements: BFQ235 and BFQ235A. FEATURES • High breakdown voltages • Low output capacitance • High gain bandwidth • Good thermal stability • Gold metallization ensures excellent reliability.

MEDIUM CURRENT PLASTIC RECTIFIER(VOLTAGE - 200 to 1300 Volts CURRENT - 3.0 Amperes)

FEATURES ● Exce High surge current capability ● Plastic package has Underwriters Laboratory Flammability Classification 94V-O ● Low leakage ● Void-free molded in DO-201AD plastic package ● High current operation of 3 Amperes at TA=95 ¢J with no thermal runaway ● eds environmental standards o

N-CHANNEL BROADBAND RF POWER FET

The RF MOSFET Line RF Power Field-Effect Transistor N–Channel Enhancement–Mode Designed for broadband commercial and industrial applications at frequencies to 54 MHz. The high gain, broadband performance and linear characterization of this device makes it ideal for large–signal, common source a

RF Power Field-Effect Transistor

The RF MOSFET Line RF Power Field-Effect Transistor N–Channel Enhancement–Mode

Silicon NPN Transistor Horizontal Driver, Amp

文件：20.08 Kbytes Page：2 Pages