LMG3522R030-Q1 650-V 30-mΩ GaN FET With Integrated Driver, Protection, and Temperature Reporting

1 Features • AEC-Q100 qualified for automotive applications – Temperature grade 1: –40°C to +125°C, TA – Junction temperature: –40°C to +150°C, TJ • 650-V GaN-on-Si FET with integrated gate driver – Integrated high precision gate bias voltage – 200-V/ns FET hold-off – 2-MHz switching freque

LMG352xR030-Q1 650-V 30-m廓 GaN FET with Integrated Driver, Protection, and Temperature Reporting

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LMG3522R030-Q1 650-V 30-mΩ GaN FET With Integrated Driver, Protection, and Temperature Reporting

1 Features • AEC-Q100 qualified for automotive applications – Temperature grade 1: –40°C to +125°C, TA – Junction temperature: –40°C to +150°C, TJ • 650-V GaN-on-Si FET with integrated gate driver – Integrated high precision gate bias voltage – 200-V/ns FET hold-off – 2-MHz switching freque