LMG2100R044 100-V, 35-A GaN Half-Bridge Power Stage

1 Features • Integrated 4.4-mΩ GaN FETs and driver • 80-V continuous, 100-V pulsed voltage rating • Package optimized for easy PCB layout • 5-V external bias power supply • Supports 3.3-V, 5-V and 12-V input logic levels • High slew rate switching with low ringing • Gate driver capable of u

LMG2100R044 100V, 35A GaN Half-Bridge Power Stage

1 Features • Integrated 4.4mΩ half-bridge GaN FETs and driver • 90V continuous, 100V pulsed voltage rating • Package optimized for easy PCB layout • High slew rate switching with low ringing • 5V external bias power supply • Supports 3.3V and 5V input logic levels • Gate driver capable of u

LMG2100R044 100V, 35A GaN Half-Bridge Power Stage

1 Features • Integrated 4.4mΩ half-bridge GaN FETs and driver • 90V continuous, 100V pulsed voltage rating • Package optimized for easy PCB layout • High slew rate switching with low ringing • 5V external bias power supply • Supports 3.3V and 5V input logic levels • Gate driver capable of u

LMG2100R044 100-V, 35-A GaN Half-Bridge Power Stage

1 Features • Integrated 4.4-mΩ GaN FETs and driver • 80-V continuous, 100-V pulsed voltage rating • Package optimized for easy PCB layout • 5-V external bias power supply • Supports 3.3-V, 5-V and 12-V input logic levels • High slew rate switching with low ringing • Gate driver capable of u

LMG2100R044 100V, 35A GaN Half-Bridge Power Stage

1 Features • Integrated 4.4mΩ half-bridge GaN FETs and driver • 90V continuous, 100V pulsed voltage rating • Package optimized for easy PCB layout • High slew rate switching with low ringing • 5V external bias power supply • Supports 3.3V and 5V input logic levels • Gate driver capable of u