1 Features

• Integrated 4.4-mΩ GaN FETs and driver

• 80-V continuous, 100-V pulsed voltage rating

• Package optimized for easy PCB layout

• 5-V external bias power supply

• Supports 3.3-V, 5-V and 12-V input logic levels

• High slew rate switching with low ringing

• Gate driver capable of up to 10-MHz switching

• Internal bootstrap supply voltage clamping to

prevent GaN FET Overdrive

• Supply rail undervoltage 4lockout protection

• Excellent propagation delay (29.5-ns typical) and

matching (2-ns typical)

• Low power consumption

• Exposed top QFN package for top-side cooling

• Large GND pad for bottom-side cooling

2 Applications

• Buck, boost, buck-boost converters

• LLC converters

• Solar inverters

• Telecom and server power

• Motor drives

• Power tools

• Class-D audio amplifiers

3 Description

The LMG2100R044 device is an 80-V continuous,

100-V pulsed, 35-A half-bridge power stage,

with integrated gate-driver and enhancement-mode

Gallium Nitride (GaN) FETs. The device consists of

two 100-V GaN FETs driven by one high-frequency

80-V GaN FET driver in a half-bridge configuration.

GaN FETs provide significant advantages for power

conversion as they have near zero reverse recovery

and very small input capacitance CISS and output

capacitance COSS. All the devices are mounted

on a completely bond-wire free package platform

with minimized package parasitic elements. The

LMG2100R044 device is available in a 5.5 mm × 4.5

mm × 0.89 mm lead-free package and can be easily

mounted on PCBs.

The TTL logic compatible inputs can withstand input

voltages up to 12 V regardless of the VCC voltage.

The proprietary bootstrap voltage clamping technique

ensures the gate voltages of the enhancement mode

GaN FETs are within a safe operating range.

The device extends advantages of discrete GaN

FETs by offering a more user-friendly interface. It

is an ideal solution for applications requiring highfrequency,

high-efficiency operation in a small form

factor.