200mA ~ 800mA Can be set by external resistance

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封装/外壳：8-SOIC（0.154"，3.90mm 宽）裸露焊盘 包装：卷带（TR） 描述：IC BATT CHG LI-ION 1CELL 8SOPFD 集成电路（IC） 电池充电器

封装/外壳：6-XDFN 裸露焊盘 包装：卷带（TR） 描述：IC BATT CHG LI-ION 1CELL 6USPEL 集成电路（IC） 电池充电器

PHASE SHIFTER DC TO 2, 4 AND 8 GHZ, COAXIAL HIGH POWER

FEATURES • Type N Connectors Standard • Options from DC to 8Ghz • High Power, Trombone Style Coaxial Structure • Military Grade Materials and Processing • -40 to + 125º C Operating Temperature Range

Dual N-Channel Enhancement Mode Field Effect Transistor

General Description The AO6804 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. AO6804 is Pb-free (meets ROHS & Sony 259 specifications). Fea

Dual N-Channel MOSFET

■ Features ● VDS (V) = 20V ● ID =5 A (VGS = 4.5V) ● RDS(ON)

20V Dual N-Channel MOSFET

General Description The AO6804A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch applications. Product Summary VDS = 20V ID = 5.0A (VGS = 4.5V) RDS(ON)

DC TO 2, 4 AND 8 GHz, COAXIAL HIGH POWER

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