200mA~800mACanbesetbyexternalresistance

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封装/外壳：8-SOIC（0.154"，3.90mm 宽）裸露焊盘 包装：卷带（TR） 描述：IC BATT CHG LI-ION 1CELL 8SOPFD 集成电路（IC） 电池充电器

封装/外壳：6-XDFN 裸露焊盘 包装：卷带（TR） 描述：IC BATT CHG LI-ION 1CELL 6USPEL 集成电路（IC） 电池充电器

PHASESHIFTERDCTO2,4AND8GHZ,COAXIALHIGHPOWER

FEATURES •TypeNConnectorsStandard •OptionsfromDCto8Ghz •HighPower,TromboneStyleCoaxialStructure •MilitaryGradeMaterialsandProcessing •-40to+125ºCOperatingTemperatureRange

DualN-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription TheAO6804usesadvancedtrenchtechnologytoprovideexcellentRDS(ON),lowgatechargeandoperationwithgatevoltagesaslowas2.5V.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications.AO6804isPb-free(meetsROHS&Sony259specifications). Fea

DualN-ChannelMOSFET

■Features ●VDS(V)=20V ●ID=5A(VGS=4.5V) ●RDS(ON)

20VDualN-ChannelMOSFET

GeneralDescription TheAO6804AusesadvancedtrenchtechnologytoprovideexcellentRDS(ON),lowgatechargeandoperationwithgatevoltagesaslowas2.5V.Thisdeviceissuitableforuseasaloadswitchapplications. ProductSummary VDS=20V ID=5.0A(VGS=4.5V) RDS(ON)

DCTO2,4AND8GHz,COAXIALHIGHPOWER

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