Dual N-Channel Enhancement Mode Field Effect Transistor

General Description The AO6804 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. AO6804 is Pb-free (meets ROHS & Sony 259 specifications). Fea

Dual N-Channel MOSFET

■ Features ● VDS (V) = 20V ● ID =5 A (VGS = 4.5V) ● RDS(ON)

MOSFET：Dual-Channel

AOS pioneered the fab-lite model in the Trench Power MOSFET field, developing leading-edge products that are exclusively manufactured in state-of-the-art 8-inch fabs. Advanced proprietary silicon and packaging processes are designed in AOS’s U.S. headquarters and are then produced with its very effi

低压MOSFET (12V - 30V)

20V Dual N-Channel MOSFET

Dual N-Channel MOSFET

■ Features ● VDS (V) = 20V ● ID =5 A (VGS = 4.5V) ● RDS(ON)

20V Dual N-Channel MOSFET

General Description The AO6804A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch applications. Product Summary VDS = 20V ID = 5.0A (VGS = 4.5V) RDS(ON)

Dual N-Channel MOSFET

■ Features ● VDS (V) = 20V ● ID =5 A (VGS = 4.5V) ● RDS(ON)

Dual N-Channel MOSFET

■ Features ● VDS (V) = 20V ● ID =5 A (VGS = 4.5V) ● RDS(ON)

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LA75503V is a PAL completely unadjusted VIF / SIF signal processing IC for TV / VTR. Supports IF frequencies of 38MHz, 38.9MHz, and 39.5MHz. It also supports PAL voice multi-system (M / N, B / G, I, D / K). Built-in voice carrier TRAP and voice carrier BPF. Adopt 4MHz for the reference frequency

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