型号 功能描述 生产厂家 企业 LOGO 操作

5 Volt, Byte Alterable E2PROM

DESCRIPTION The X28HC256 is a second generation high performance CMOS 32K x 8 E2PROM. It is fabricated with Xicor’s proprietary, textured poly floating gate technology, providing a highly reliable 5 Volt only nonvolatile memory. FEATURES • Access Time: 70ns • Simple Byte and Page Write —Si

Xicor

Xicor Inc.

5 Volt, Byte Alterable EEPROM

5V, Byte Alterable EEPROM The X28HC256 is a second generation high performance CMOS 32k x 8 EEPROM. It is fabricated with Intersil’s proprietary, textured poly floating gate technology, providing a highly reliable 5V only nonvolatile memory Features • Access time: 70ns • Simple byte and pa

Intersil

5 Volt, Byte Alterable EEPROM

5V, Byte Alterable EEPROM The X28HC256 is a second generation high performance CMOS 32k x 8 EEPROM. It is fabricated with Intersil’s proprietary, textured poly floating gate technology, providing a highly reliable 5V only nonvolatile memory Features • Access time: 70ns • Simple byte and pa

Intersil

5 Volt, Byte Alterable E2PROM

DESCRIPTION The X28HC256 is a second generation high performance CMOS 32K x 8 E2PROM. It is fabricated with Xicor’s proprietary, textured poly floating gate technology, providing a highly reliable 5 Volt only nonvolatile memory. FEATURES • Access Time: 70ns • Simple Byte and Page Write —Si

Xicor

Xicor Inc.

5 Volt, Byte Alterable E2PROM

DESCRIPTION The X28HC256 is a second generation high performance CMOS 32K x 8 E2PROM. It is fabricated with Xicor’s proprietary, textured poly floating gate technology, providing a highly reliable 5 Volt only nonvolatile memory. FEATURES • Access Time: 70ns • Simple Byte and Page Write —Si

Xicor

Xicor Inc.

5 Volt, Byte Alterable E2PROM

DESCRIPTION The X28HC256 is a second generation high performance CMOS 32K x 8 E2PROM. It is fabricated with Xicor’s proprietary, textured poly floating gate technology, providing a highly reliable 5 Volt only nonvolatile memory. FEATURES • Access Time: 70ns • Simple Byte and Page Write —Si

Xicor

Xicor Inc.

LOW POWER CMOS EEPROM with hi-speed page write capability 256K EEPROM

The X28HC256 is a second generation high performance CMOS 32k x 8 EEPROM. It is fabricated with Intersil’s proprietary, textured poly floating gate technology, providing a highly reliable 5V only nonvolatile memory. The X28HC256 supports a 128-byte page write operation, effectively providing a 24µ

ROCHESTER

罗切斯特

LOW POWER CMOS EEPROM with hi-speed page write capability 256K EEPROM

The X28HC256 is a second generation high performance CMOS 32k x 8 EEPROM. It is fabricated with Intersil’s proprietary, textured poly floating gate technology, providing a highly reliable 5V only nonvolatile memory. The X28HC256 supports a 128-byte page write operation, effectively providing a 24µ

ROCHESTER

罗切斯特

256k, 32k x 8-Bit, 5V, Byte Alterable EEPROM

The X28HC256 is a second generation high performance CMOS 32k x 8 EEPROM. It is fabricated with Intersil’s proprietary, textured poly floating gate technology, providing a highly reliable 5V only nonvolatile memory. The X28HC256 supports a 128-byte page write operation, effectively providing

Intersil

5 Volt, Byte Alterable EEPROM

5V, Byte Alterable EEPROM The X28HC256 is a second generation high performance CMOS 32k x 8 EEPROM. It is fabricated with Intersil’s proprietary, textured poly floating gate technology, providing a highly reliable 5V only nonvolatile memory Features • Access time: 70ns • Simple byte and pa

Intersil

5 Volt, Byte Alterable EEPROM

5V, Byte Alterable EEPROM The X28HC256 is a second generation high performance CMOS 32k x 8 EEPROM. It is fabricated with Intersil’s proprietary, textured poly floating gate technology, providing a highly reliable 5V only nonvolatile memory Features • Access time: 70ns • Simple byte and pa

Intersil

256k, 32k x 8-Bit, 5V, Byte Alterable EEPROM

The X28HC256 is a second generation high performance CMOS 32k x 8 EEPROM. It is fabricated with Intersil’s proprietary, textured poly floating gate technology, providing a highly reliable 5V only nonvolatile memory. The X28HC256 supports a 128-byte page write operation, effectively providing

Intersil

256k, 32k x 8-Bit, 5V, Byte Alterable EEPROM

The X28HC256 is a second generation high performance CMOS 32k x 8 EEPROM. It is fabricated with Intersil’s proprietary, textured poly floating gate technology, providing a highly reliable 5V only nonvolatile memory. The X28HC256 supports a 128-byte page write operation, effectively providing

Intersil

LOW POWER CMOS EEPROM with hi-speed page write capability 256K EEPROM

The X28HC256 is a second generation high performance CMOS 32k x 8 EEPROM. It is fabricated with Intersil’s proprietary, textured poly floating gate technology, providing a highly reliable 5V only nonvolatile memory. The X28HC256 supports a 128-byte page write operation, effectively providing a 24µ

ROCHESTER

罗切斯特

5V, Byte Alterable EEPROM

文件:410.17 Kbytes Page:20 Pages

Intersil

5V, Byte Alterable EEPROM

文件:410.17 Kbytes Page:20 Pages

Intersil

5V, Byte Alterable EEPROM

文件:410.17 Kbytes Page:20 Pages

Intersil

5V, Byte Alterable EEPROM

文件:410.17 Kbytes Page:20 Pages

Intersil

256k, 32k x 8-Bit, 5V, Byte Alterable EEPROM

文件:873.01 Kbytes Page:19 Pages

RENESAS

瑞萨

256k, 32k x 8-Bit, 5V, Byte Alterable EEPROM

文件:873.01 Kbytes Page:19 Pages

RENESAS

瑞萨

5V, Byte Alterable EEPROM

文件:410.17 Kbytes Page:20 Pages

Intersil

5V, Byte Alterable EEPROM

文件:410.17 Kbytes Page:20 Pages

Intersil

256k, 32k x 8-Bit, 5V, Byte Alterable EEPROM

文件:873.01 Kbytes Page:19 Pages

RENESAS

瑞萨

封装/外壳:28-DIP(0.600",15.24mm) 包装:托盘 描述:IC EEPROM 256KBIT PARALLEL 28DIP 集成电路(IC) 存储器

ETC

知名厂家

256 32K x 8 High Speed Parallel EEPROMs

Description The AT28HC256 is a high-performance electrically erasable and programmable read only memory. Its 256K of memory is organized as 32,768 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the AT28HC256 offers access times to 70 ns with power dissipation of

Atmel

爱特梅尔

256 32K x 8 High Speed Parallel EEPROMs

Description The AT28HC256 is a high-performance electrically erasable and programmable read only memory. Its 256K of memory is organized as 32,768 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the AT28HC256 offers access times to 70 ns with power dissipation of

Atmel

爱特梅尔

256 32K x 8 High Speed CMOS E2PROM

文件:728.35 Kbytes Page:12 Pages

Atmel

爱特梅尔

256 32K x 8 High Speed CMOS E2PROM

文件:728.35 Kbytes Page:12 Pages

Atmel

爱特梅尔

256 32K x 8 High Speed CMOS E2PROM

文件:728.35 Kbytes Page:12 Pages

Atmel

爱特梅尔

X28HC256PI产品属性

  • 类型

    描述

  • 型号

    X28HC256PI

  • 制造商

    Intersil Corporation

更新时间:2026-1-1 10:19:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
XICOR
20+
SOP-28
2960
诚信交易大量库存现货
XICOR
23+24
DIP-
9680
原盒原标.进口原装.支持实单 .价格优势
24+
N/A
58000
一级代理-主营优势-实惠价格-不悔选择
XICOR
1824+
DIP
800
原装现货专业代理,可以代拷程序
XICOR
2022+
DIP
1500
原厂代理 终端免费提供样品
Intersil
24+
-
56200
一级代理/放心采购
原装
1923+
DIP28
9200
公司原装现货假一罚十特价欢迎来电咨询
XICOR
25+
SOP28
54658
百分百原装现货 实单必成
XICOR
23+
DIP-28
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
Renesas Inc
25+
电联咨询
7800
公司现货,提供拆样技术支持

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