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| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
5 Volt, Byte Alterable E2PROM DESCRIPTION The X28HC256 is a second generation high performance CMOS 32K x 8 E2PROM. It is fabricated with Xicor’s proprietary, textured poly floating gate technology, providing a highly reliable 5 Volt only nonvolatile memory. FEATURES • Access Time: 70ns • Simple Byte and Page Write —Si | Xicor Xicor Inc. |   | ||
5 Volt, Byte Alterable EEPROM 5V, Byte Alterable EEPROM The X28HC256 is a second generation high performance CMOS 32k x 8 EEPROM. It is fabricated with Intersil’s proprietary, textured poly floating gate technology, providing a highly reliable 5V only nonvolatile memory Features • Access time: 70ns • Simple byte and pa | Intersil | | ||
5 Volt, Byte Alterable EEPROM 5V, Byte Alterable EEPROM The X28HC256 is a second generation high performance CMOS 32k x 8 EEPROM. It is fabricated with Intersil’s proprietary, textured poly floating gate technology, providing a highly reliable 5V only nonvolatile memory Features • Access time: 70ns • Simple byte and pa | Intersil | | ||
5 Volt, Byte Alterable E2PROM DESCRIPTION The X28HC256 is a second generation high performance CMOS 32K x 8 E2PROM. It is fabricated with Xicor’s proprietary, textured poly floating gate technology, providing a highly reliable 5 Volt only nonvolatile memory. FEATURES • Access Time: 70ns • Simple Byte and Page Write —Si | Xicor Xicor Inc. | | ||
5 Volt, Byte Alterable E2PROM DESCRIPTION The X28HC256 is a second generation high performance CMOS 32K x 8 E2PROM. It is fabricated with Xicor’s proprietary, textured poly floating gate technology, providing a highly reliable 5 Volt only nonvolatile memory. FEATURES • Access Time: 70ns • Simple Byte and Page Write —Si | Xicor Xicor Inc. | | ||
5 Volt, Byte Alterable E2PROM DESCRIPTION The X28HC256 is a second generation high performance CMOS 32K x 8 E2PROM. It is fabricated with Xicor’s proprietary, textured poly floating gate technology, providing a highly reliable 5 Volt only nonvolatile memory. FEATURES • Access Time: 70ns • Simple Byte and Page Write —Si | Xicor Xicor Inc. | | ||
LOW POWER CMOS EEPROM with hi-speed page write capability 256K EEPROM The X28HC256 is a second generation high performance CMOS 32k x 8 EEPROM. It is fabricated with Intersil’s proprietary, textured poly floating gate technology, providing a highly reliable 5V only nonvolatile memory. The X28HC256 supports a 128-byte page write operation, effectively providing a 24µ | ROCHESTER 罗切斯特 | | ||
5 Volt, Byte Alterable E2PROM DESCRIPTION The X28HC256 is a second generation high performance CMOS 32K x 8 E2PROM. It is fabricated with Xicor’s proprietary, textured poly floating gate technology, providing a highly reliable 5 Volt only nonvolatile memory. FEATURES • Access Time: 70ns • Simple Byte and Page Write —Si | Xicor Xicor Inc. | | ||
5 Volt, Byte Alterable EEPROM 5V, Byte Alterable EEPROM The X28HC256 is a second generation high performance CMOS 32k x 8 EEPROM. It is fabricated with Intersil’s proprietary, textured poly floating gate technology, providing a highly reliable 5V only nonvolatile memory Features • Access time: 70ns • Simple byte and pa | Intersil | | ||
5 Volt, Byte Alterable EEPROM 5V, Byte Alterable EEPROM The X28HC256 is a second generation high performance CMOS 32k x 8 EEPROM. It is fabricated with Intersil’s proprietary, textured poly floating gate technology, providing a highly reliable 5V only nonvolatile memory Features • Access time: 70ns • Simple byte and pa | Intersil | | ||
5 Volt, Byte Alterable E2PROM DESCRIPTION The X28HC256 is a second generation high performance CMOS 32K x 8 E2PROM. It is fabricated with Xicor’s proprietary, textured poly floating gate technology, providing a highly reliable 5 Volt only nonvolatile memory. FEATURES • Access Time: 70ns • Simple Byte and Page Write —Si | Xicor Xicor Inc. | | ||
5 Volt, Byte Alterable E2PROM DESCRIPTION The X28HC256 is a second generation high performance CMOS 32K x 8 E2PROM. It is fabricated with Xicor’s proprietary, textured poly floating gate technology, providing a highly reliable 5 Volt only nonvolatile memory. FEATURES • Access Time: 70ns • Simple Byte and Page Write —Si | Xicor Xicor Inc. | | ||
LOW POWER CMOS EEPROM with hi-speed page write capability 256K EEPROM The X28HC256 is a second generation high performance CMOS 32k x 8 EEPROM. It is fabricated with Intersil’s proprietary, textured poly floating gate technology, providing a highly reliable 5V only nonvolatile memory. The X28HC256 supports a 128-byte page write operation, effectively providing a 24µ | ROCHESTER 罗切斯特 | | ||
5 Volt, Byte Alterable E2PROM DESCRIPTION The X28HC256 is a second generation high performance CMOS 32K x 8 E2PROM. It is fabricated with Xicor’s proprietary, textured poly floating gate technology, providing a highly reliable 5 Volt only nonvolatile memory. FEATURES • Access Time: 70ns • Simple Byte and Page Write —Si | Xicor Xicor Inc. | | ||
5 Volt, Byte Alterable EEPROM 5V, Byte Alterable EEPROM The X28HC256 is a second generation high performance CMOS 32k x 8 EEPROM. It is fabricated with Intersil’s proprietary, textured poly floating gate technology, providing a highly reliable 5V only nonvolatile memory Features • Access time: 70ns • Simple byte and pa | Intersil | | ||
LOW POWER CMOS EEPROM with hi-speed page write capability 256K EEPROM The X28HC256 is a second generation high performance CMOS 32k x 8 EEPROM. It is fabricated with Intersil’s proprietary, textured poly floating gate technology, providing a highly reliable 5V only nonvolatile memory. The X28HC256 supports a 128-byte page write operation, effectively providing a 24µ | ROCHESTER 罗切斯特 | | ||
256k, 32k x 8-Bit, 5V, Byte Alterable EEPROM The X28HC256 is a second generation high performance CMOS 32k x 8 EEPROM. It is fabricated with Intersil’s proprietary, textured poly floating gate technology, providing a highly reliable 5V only nonvolatile memory. The X28HC256 supports a 128-byte page write operation, effectively providing | Intersil | | ||
256k, 32k x 8-Bit, 5V, Byte Alterable EEPROM The X28HC256 is a second generation high performance CMOS 32k x 8 EEPROM. It is fabricated with Intersil’s proprietary, textured poly floating gate technology, providing a highly reliable 5V only nonvolatile memory. The X28HC256 supports a 128-byte page write operation, effectively providing | Intersil | | ||
5 Volt, Byte Alterable EEPROM 5V, Byte Alterable EEPROM The X28HC256 is a second generation high performance CMOS 32k x 8 EEPROM. It is fabricated with Intersil’s proprietary, textured poly floating gate technology, providing a highly reliable 5V only nonvolatile memory Features • Access time: 70ns • Simple byte and pa | Intersil | | ||
256k, 32k x 8-Bit, 5V, Byte Alterable EEPROM The X28HC256 is a second generation high performance CMOS 32k x 8 EEPROM. It is fabricated with Intersil’s proprietary, textured poly floating gate technology, providing a highly reliable 5V only nonvolatile memory. The X28HC256 supports a 128-byte page write operation, effectively providing | Intersil | | ||
LOW POWER CMOS EEPROM with hi-speed page write capability 256K EEPROM The X28HC256 is a second generation high performance CMOS 32k x 8 EEPROM. It is fabricated with Intersil’s proprietary, textured poly floating gate technology, providing a highly reliable 5V only nonvolatile memory. The X28HC256 supports a 128-byte page write operation, effectively providing a 24µ | ROCHESTER 罗切斯特 | | ||
LOW POWER CMOS EEPROM with hi-speed page write capability 256K EEPROM The X28HC256 is a second generation high performance CMOS 32k x 8 EEPROM. It is fabricated with Intersil’s proprietary, textured poly floating gate technology, providing a highly reliable 5V only nonvolatile memory. The X28HC256 supports a 128-byte page write operation, effectively providing a 24µ | ROCHESTER 罗切斯特 | | ||
5 Volt, Byte Alterable E2PROM DESCRIPTION The X28HC256 is a second generation high performance CMOS 32K x 8 E2PROM. It is fabricated with Xicor’s proprietary, textured poly floating gate technology, providing a highly reliable 5 Volt only nonvolatile memory. FEATURES • Access Time: 70ns • Simple Byte and Page Write —Si | Xicor Xicor Inc. | | ||
5 Volt, Byte Alterable E2PROM DESCRIPTION The X28HC256 is a second generation high performance CMOS 32K x 8 E2PROM. It is fabricated with Xicor’s proprietary, textured poly floating gate technology, providing a highly reliable 5 Volt only nonvolatile memory. FEATURES • Access Time: 70ns • Simple Byte and Page Write —Si | Xicor Xicor Inc. | | ||
5 Volt, Byte Alterable EEPROM 5V, Byte Alterable EEPROM The X28HC256 is a second generation high performance CMOS 32k x 8 EEPROM. It is fabricated with Intersil’s proprietary, textured poly floating gate technology, providing a highly reliable 5V only nonvolatile memory Features • Access time: 70ns • Simple byte and pa | Intersil | | ||
5 Volt, Byte Alterable E2PROM DESCRIPTION The X28HC256 is a second generation high performance CMOS 32K x 8 E2PROM. It is fabricated with Xicor’s proprietary, textured poly floating gate technology, providing a highly reliable 5 Volt only nonvolatile memory. FEATURES • Access Time: 70ns • Simple Byte and Page Write —Si | Xicor Xicor Inc. | | ||
5 Volt, Byte Alterable E2PROM DESCRIPTION The X28HC256 is a second generation high performance CMOS 32K x 8 E2PROM. It is fabricated with Xicor’s proprietary, textured poly floating gate technology, providing a highly reliable 5 Volt only nonvolatile memory. FEATURES • Access Time: 70ns • Simple Byte and Page Write —Si | Xicor Xicor Inc. | | ||
5 Volt, Byte Alterable E2PROM DESCRIPTION The X28HC256 is a second generation high performance CMOS 32K x 8 E2PROM. It is fabricated with Xicor’s proprietary, textured poly floating gate technology, providing a highly reliable 5 Volt only nonvolatile memory. FEATURES • Access Time: 70ns • Simple Byte and Page Write —Si | Xicor Xicor Inc. | | ||
5 Volt, Byte Alterable E2PROM DESCRIPTION The X28HC256 is a second generation high performance CMOS 32K x 8 E2PROM. It is fabricated with Xicor’s proprietary, textured poly floating gate technology, providing a highly reliable 5 Volt only nonvolatile memory. FEATURES • Access Time: 70ns • Simple Byte and Page Write —Si | Xicor Xicor Inc. | | ||
5 Volt, Byte Alterable E2PROM DESCRIPTION The X28HC256 is a second generation high performance CMOS 32K x 8 E2PROM. It is fabricated with Xicor’s proprietary, textured poly floating gate technology, providing a highly reliable 5 Volt only nonvolatile memory. FEATURES • Access Time: 70ns • Simple Byte and Page Write —Si | Xicor Xicor Inc. | | ||
5 Volt, Byte Alterable E2PROM DESCRIPTION The X28HC256 is a second generation high performance CMOS 32K x 8 E2PROM. It is fabricated with Xicor’s proprietary, textured poly floating gate technology, providing a highly reliable 5 Volt only nonvolatile memory. FEATURES • Access Time: 70ns • Simple Byte and Page Write —Si | Xicor Xicor Inc. | | ||
5 Volt, Byte Alterable EEPROM 5V, Byte Alterable EEPROM The X28HC256 is a second generation high performance CMOS 32k x 8 EEPROM. It is fabricated with Intersil’s proprietary, textured poly floating gate technology, providing a highly reliable 5V only nonvolatile memory Features • Access time: 70ns • Simple byte and pa | Intersil | | ||
256k, 32k x 8-Bit, 5V, Byte Alterable EEPROM The X28HC256 is a second generation high performance CMOS 32k x 8 EEPROM. It is fabricated with Intersil’s proprietary, textured poly floating gate technology, providing a highly reliable 5V only nonvolatile memory. The X28HC256 supports a 128-byte page write operation, effectively providing | Intersil | | ||
256k, 32k x 8-Bit, 5V, Byte Alterable EEPROM The X28HC256 is a second generation high performance CMOS 32k x 8 EEPROM. It is fabricated with Intersil’s proprietary, textured poly floating gate technology, providing a highly reliable 5V only nonvolatile memory. The X28HC256 supports a 128-byte page write operation, effectively providing | Intersil | | ||
5 Volt, Byte Alterable EEPROM 5V, Byte Alterable EEPROM The X28HC256 is a second generation high performance CMOS 32k x 8 EEPROM. It is fabricated with Intersil’s proprietary, textured poly floating gate technology, providing a highly reliable 5V only nonvolatile memory Features • Access time: 70ns • Simple byte and pa | Intersil | | ||
LOW POWER CMOS EEPROM with hi-speed page write capability 256K EEPROM The X28HC256 is a second generation high performance CMOS 32k x 8 EEPROM. It is fabricated with Intersil’s proprietary, textured poly floating gate technology, providing a highly reliable 5V only nonvolatile memory. The X28HC256 supports a 128-byte page write operation, effectively providing a 24µ | ROCHESTER 罗切斯特 | | ||
256k, 32k x 8-Bit, 5V, Byte Alterable EEPROM The X28HC256 is a second generation high performance CMOS 32k x 8 EEPROM. It is fabricated with Intersil’s proprietary, textured poly floating gate technology, providing a highly reliable 5V only nonvolatile memory. The X28HC256 supports a 128-byte page write operation, effectively providing | Intersil | | ||
5V, Byte Alterable EEPROM 文件：410.17 Kbytes Page：20 Pages | Intersil | | ||
5V, Byte Alterable EEPROM 文件：410.17 Kbytes Page：20 Pages | Intersil | | ||
5V, Byte Alterable EEPROM 文件：410.17 Kbytes Page：20 Pages | Intersil | | ||
5V, Byte Alterable EEPROM 文件：410.17 Kbytes Page：20 Pages | Intersil | | ||
5V, Byte Alterable EEPROM 文件：410.17 Kbytes Page：20 Pages | Intersil | | ||
5V, Byte Alterable EEPROM 文件：410.17 Kbytes Page：20 Pages | Intersil | | ||
5V, Byte Alterable EEPROM 文件：410.17 Kbytes Page：20 Pages | Intersil | | ||
256k, 32k x 8-Bit, 5V, Byte Alterable EEPROM 文件：873.01 Kbytes Page：19 Pages | RENESAS 瑞萨 | | ||
5V, Byte Alterable EEPROM 文件：410.17 Kbytes Page：20 Pages | Intersil | | ||
256k, 32k x 8-Bit, 5V, Byte Alterable EEPROM 文件：873.01 Kbytes Page：19 Pages | RENESAS 瑞萨 | | ||
5V, Byte Alterable EEPROM 文件：410.17 Kbytes Page：20 Pages | Intersil | | ||
256k, 32k x 8-Bit, 5V, Byte Alterable EEPROM 文件：873.01 Kbytes Page：19 Pages | RENESAS 瑞萨 | | ||
5V, Byte Alterable EEPROM 文件：410.17 Kbytes Page：20 Pages | Intersil | | ||
包装：散装 描述：IC AMP CLASS 集成电路（IC） 存储器 | ETC 知名厂家 | ETC | | |
256k, 32k x 8-Bit, 5V, Byte Alterable EEPROM 文件：873.01 Kbytes Page：19 Pages | RENESAS 瑞萨 | | ||
5V, Byte Alterable EEPROM 文件：410.17 Kbytes Page：20 Pages | Intersil | | ||
256k, 32k x 8-Bit, 5V, Byte Alterable EEPROM 文件：873.01 Kbytes Page：19 Pages | RENESAS 瑞萨 | | ||
5V, Byte Alterable EEPROM 文件：410.17 Kbytes Page：20 Pages | Intersil | | ||
封装/外壳：28-DIP（0.600"，15.24mm） 包装：托盘 描述：IC EEPROM 256KBIT PARALLEL 28DIP 集成电路（IC） 存储器 | ETC 知名厂家 | ETC | | |
256k, 32k x 8-Bit, 5V, Byte Alterable EEPROM 文件：873.01 Kbytes Page：19 Pages | RENESAS 瑞萨 | | ||
5V, Byte Alterable EEPROM 文件：410.17 Kbytes Page：20 Pages | Intersil | | ||
256 32K x 8 High Speed Parallel EEPROMs Description The AT28HC256 is a high-performance electrically erasable and programmable read only memory. Its 256K of memory is organized as 32,768 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the AT28HC256 offers access times to 70 ns with power dissipation of | Atmel 爱特梅尔 | | ||
256 32K x 8 High Speed Parallel EEPROMs Description The AT28HC256 is a high-performance electrically erasable and programmable read only memory. Its 256K of memory is organized as 32,768 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the AT28HC256 offers access times to 70 ns with power dissipation of | Atmel 爱特梅尔 | |
X28HC256P产品属性
- 类型
描述
- 型号
X28HC256P
- 制造商
Intersil Corporation
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
XICOR |
11+ |
DIP |
431 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
XICOR |
22+ |
DIP28 |
100000 |
代理渠道/只做原装/可含税 |
|||
OKI |
24+ |
NA/ |
3278 |
原厂直销,现货供应,账期支持! |
|||
XICOR |
25+ |
DIP28 |
54658 |
百分百原装现货 实单必成 |
|||
XICOR |
20+ |
DIP28 |
67500 |
原装优势主营型号-可开原型号增税票 |
|||
XIC |
23+ |
65480 |
|||||
XICOR |
25+ |
DIP |
18000 |
原厂直接发货进口原装 |
|||
XICOR |
2025+ |
DIP |
4850 |
原装进口价格优 请找坤融电子! |
|||
24+ |
DIP |
52 |
|||||
XICOR |
23+ |
DIP-28 |
5000 |
原装正品,假一罚十 |
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2012-12-29
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