Description

The GTRA364002FC is a 400-watt (P3dB) GaN on SiC high electron

mobility transistor (HEMT) designed for use in multi-standard cellular

power amplifier applications. It features input matching, high efficency,

and a thermally-enhanced package with earless flange.

Features

• GaN on SiC HEMT technology

• Input matched

• Asymmetrical Doherty design

- Main: P3dB = 170 W Typ

- Peak: P3dB = 230 W Typ

• Typical Pulsed CW performance, 3400 to 3600 MHz,

48 V, combined outputs, Doherty @ P3dB, 10 µs,

10 duty cycle

- Output power = 400 W

- Efficiency = 60

- Gain = 14 dB

• Capable of handling 10:1 VSWR @ 48 V, 50 W

(WCDMA) output power

• Human Body Model Class 1A, (per ANSI/ESDA/

JEDEC JS-001)

• Low thermal resistance

• Pb-free and RoHS complian