Description

The GTRA362002FC is a 200-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellular power

amplifier applications. It features input matching, high efficiency, and a

thermally-enhanced package with earless flange.

Features

• GaN on SiC HEMT technology

• Input matched

• Asymmetrical Doherty design

- Main: P3dB = 85 W Typ

- Peak: P3dB = 115 W Typ

• Typical Pulsed CW performance, 3500 MHz, 48 V,

combined outputs

- Output power at P3dB = 200 W

- Efficiency = 60

- Gain = 12.5 dB

• Capable of handling 10:1 VSWR @50 V, 30 W (WCDMA)

output power

• Human Body Model Class 1A, (per ANSI/ESDA/JEDEC

JS-001)

• Low thermal resistance

• Pb-free and RoHS compliant