Description

The GTRA362802FC is a 280-watt (P3dB) GaN on SiC high electron

mobility transistor (HEMT) designed for use in multi-standard cellular

power amplifier applications. It features input matching, high

efficiency, and a thermally-enhanced package with earless flange.

Features

• GaN on SiC HEMT technology

• Input matched

• Asymmetrical Doherty design

- Main: P3dB = 120 W Typ

- Peak: P3dB = 180 W Typ

• Typical Pulsed CW performance, 3400 – 3600 MHz,

48 V, combined outputs, 10 µs pulse width, 10

duty cycle

- Output power at P3dB = 280 W

- Drain Efficiency = 60

- Gain = 15 dB

• Capable of handling 10:1 VSWR @48 V, 44 W (CW)

output power

• Human Body Model Class 1A (per ANSI/ESDA/

JEDEC JS-001)

• Low thermal resistance

• Pb-free and RoHS compliant