Description

Wolfspeed’s CGHV1F025S is an unmatched, gallium nitride (GaN) high electron

mobility transistor (HEMT) designed specifically for high efficiency, high gain and

wide bandwidth capabilities. The device can be deployed for L-, S-, C-, X- and

Ku-Band amplifier applications. The datasheet specifications are based on a

X-Band (8.9 - 9.6 GHz) amplifier. The CGHV1F025S operates on a 40 volt rail circuit

while housed in a 3mm x 4mm, surface mount, dual-flat-no-lead (DFN) package.

Under reduced power, the transistor can operate below 40V to as low as 20V VDD,

maintaining high gain and efficiency.

Features

• Up to 15 GHz Operation

• 25 W Typical Output Power

• 11 dB Gain at 9.4 GHz

• Application circuit for 8.9 - 9.6 GHz