Description

Wolfspeed’s CGHV1J006D is a high voltage gallium nitride (GaN) High

Electron Mobility Transistor (HEMT) on a silicon carbide substrate, using

a 0.25 μm gate length fabrication process. This GaN-on-SiC product offers

superior high frequency, high efficiency features. It is ideal for a variety

of applications operating from 10 MHz to 18 GHz at 40 V with a high

breakdown voltage.

Large Signal Models Available for ADS and MWO

Features

• 17 dB Typ. Small Signal Gain at 10 GHz

• 60 Typ. PAE at 10 GHz

• 6 W Typical PSAT

• 40 V Operation

• Up to 18 GHz Operation

Applications

• Satellite Communications

• PTP Communications Links

• Marine Radar

• Pleasure Craft Radar

• Port Vessel Traffic Services

• Broadband Amplifiers

• High Efficiency Amplifiers