Description

Wolfspeed’s CGHV1F006S is an unmatched, gallium nitride (GaN) high electron

mobility transistor (HEMT) designed specifically for high efficiency, high gain and

wide bandwidth capabilities. The device can be deployed for L, S, C, X and Ku-Band

amplifier applications. The datasheet specifications are based on a C-Band (5.5

- 6.5 GHz) amplifier. Additional application circuits are available for C-Band at

5.8 GHz - 7.2 GHz and X-Band at 7.9 - 8.4 GHz and 8.5 - 9.6 GHz. The CGHV1F006S

operates on a 40 volt rail circuit while housed in a 3mm x 4mm, surface mount, dualflat-no-lead (DFN) package. Under reduced power, the transistor can operate below

40V to as low as 20V VDD, maintaining high gain and efficiency.

Large Signal Models Available for ADS and MWO

• Up to 15 GHz Operation

• 8 W Typical Output Power

• 17 dB Gain at 6.0 GHz

• 15 dB Gain at 9.0 GHz

• Application circuits for 5.8 - 7.2 GHz, 7.9 - 8.4GHz,

and 8.5 - 9.6 GHz.

• High degree of APD and DPD correction can

be applied

Features for 40 V in CGHV1F006S-AMP