N-Channel MOSFET uses advanced trench technology

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高压场效应管（100-800V）

高压场效应管（100-800V）

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-252 package is widely preferred for all commercial-industrial applications. ▼Simple Drive Requirement

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220CFM isolation package is widely preferred for commercial-industrial through hole applications.

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is widely preferred for commercial-industrial through-hole applications. ▼Simple Drive Re

Simple Drive Requirement Lower Gate Charge

Description AP09N20B series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The TO-263

N-Channel MOSFET uses advanced trench technology

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