Very Low Power/Voltage CMOS SRAM

Very Low Power/Voltage CMOS SRAM 512K x 8 bit

低功耗静态随机存贮器

Very Low Power/Voltage CMOS SRAM

Very Low Power/Voltage CMOS SRAM 512K x 8 bit

Very Low Power/Voltage CMOS SRAM

Very Low Power/Voltage CMOS SRAM 512K x 8 bit

Very Low Power/Voltage CMOS SRAM

Very Low Power/Voltage CMOS SRAM 512K x 8 bit

Very Low Power/Voltage CMOS SRAM 512K X 8 bit

Very Low Power/Voltage CMOS SRAM

4 M SRAM (512-kword x 8-bit)

Description The Hitachi HM628512B is a 4-Mbit static RAM organized 512-kword ×8-bit. It realizes higher density, higher performance and low power consumption by employing 0.35 µm Hi-CMOS process technology. The device, packaged in a 525-mil SOP (foot print pitch width) or 400-mil TSOP TYPE II o

4M SRAM (512 KWORD X 8 BIT)

Description The Hitachi HM628512A is a 4-Mbit static RAM organized 512-kword ×8-bit. It realizes higher density, higher performance and low power consumption by employing 0.35 µm Hi-CMOS process technology. The device, packaged in a 525-mil SOP (foot print pitch width) or 400-mil TSOP TYPE II o

524288-word x 8-bit High Speed CMOS Static RAM

Description The Hitachi HM628512AI is a 4-Mbit static RAM organized 512-kword x 8-bit. It realizes higher density, higher performance and low power consumption by conploying 0.5 μm Hi-CMOS process technology.

524288-word x 8-bit High Speed CMOS Static RAM

文件：88.91 Kbytes Page：15 Pages

524288-word x 8-bit High Speed CMOS Static RAM

文件：88.91 Kbytes Page：15 Pages