Dual N-Channel, 20V, 6.3A, Power MOSFET

文件：2.33939 Mbytes Page：8 Pages

MOSFET/场效应管

场效应晶体管

Dual N-Channel, 20V, 6.3A, Power MOSFET

文件：2.33939 Mbytes Page：8 Pages

Dual N-Channel, 20V, 6.3A, Power MOSFET

文件：2.33939 Mbytes Page：8 Pages

Customer Specification

Construction 1) Conductor a) Material Tinned Copper, per ASTMB-33 and CID-A-A-59551 b) Stranding Solid c) Diameter 0.010 2) Braid Data a) Nominal ID 1-1/8 (1.125) b) AWG of Ends 30 c) Number of Carriers 48 d) Nominal Percent Coverage 91 e) Total Number of Ends 432 f) Approx. Equiv. AWG

W-band Mixer

Description The CHM2179a is a balanced Schottky diode mixer based on a six quarter wave ring structure. This circuit is manufactured with the BES-MMIC process: 1 µm Schottky diode device, air bridges, via holes through the substrate, stepper lithography. It is available in chip form. Main

T-1 3/4 Wire Terminal (standard)

T-1 3/4 Wire Terminal (standard)

W-band Mixer

文件：135.79 Kbytes Page：9 Pages

Reflective Photosensor

文件：65.4 Kbytes Page：3 Pages