N-Channel MOSFET

Features □ Low Intrinsic Capacitances □ Excellent Switching Characteristics □ Extended Safe Operating Area □ Unrivalled Gate Charge :Qg= 15nC (Typ.) □ BVDSS=600V,ID=4A □ RDS(on) :2.3 Ω (Max) @VG=10V □ 100 Avalanche Tested

600V N-Channel MOSFET

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Silicon N-Channel MOSFET

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场效应管

600V N-Channel MOSFET

文件：1.4917 Mbytes Page：6 Pages

场效应管

Silicon N-Channel MOSFET

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4 Amps, 600 Volts N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 4N60is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications i

4 Amps竊?00Volts N-Channel MOSFET

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4 Amps, 600/650 Volts N-CHANNEL POWER MOSFET

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N-Channel Power MOSFET

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N-CHANNEL POWER MOSFET

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