N-Channel MOSFET

600V N-Channel MOSFET Features □ Low Intrinsic Capacitances □ Excellent Switching Characteristics □ Extended Safe Operating Area □ Unrivalled Gate Charge : 8.5 nC (Typ.) □ BVDSS=600V,ID=2A □ Lower RDS(on) : 5Ω (Max) @VG=10V □ 100 Avalanche Tested

Silicon N-Channel MOSFET

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N-Channel 650 V (D-S) MOSFET

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Silicon N-Channel MOSFET

N-Channel 650 V (D-S) MOSFET

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场效应管

Silicon N-Channel MOSFET

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Silicon N-Channel MOSFET

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Silicon N-Channel MOSFET

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超结MOSFET

600V N-Channel Power MOSFET

Features ● RDS(ON)

N2 Amps竊?00Volts N-Channel MOSFET

Description The ET2N60 N-Ceannel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. Features ● RDS(ON) = 5.00Ω@VGS = 10 V ● Low gate charge

2 Amps, 600/650 Volts N-CHANNEL POWER MOSFET

The UTC 2N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power upplies, PWM

2 Amps, 600 Volts N-CHANNEL MOSFET

DESCRIPTION The UTC 2N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in

2A 600V N-channel Enhancement Mode Power MOSFET

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