4M X 4 BANKS X 16 BITS DDR SDRAM

GENERAL DESCRIPTION W9425G6DH is a CMOS Double Data Rate synchronous dynamic random access memory (DDR SDRAM), organized as 4,194,304 words × 4 banks × 16 bits. Using pipelined architecture and 0.11 µm process technology, W9425G6DH delivers a data bandwidth of up to 500M words per second (-4). To

4 M 횞 4 BANKS 횞 16 BITS DDR SDRAM

GENERAL DESCRIPTION W9425G6EH is a CMOS Double Data Rate synchronous dynamic random access memory (DDR SDRAM), organized as 4,194,304 words × 4 banks × 16 bits. W9425G6EH delivers a data bandwidth of up to 500M words per second (-4). To fully comply with the personal computer industrial standard,

4 M 횞 4 BANKS 횞 16 BITS DDR SDRAM

GENERAL DESCRIPTION W9425G6EH is a CMOS Double Data Rate synchronous dynamic random access memory (DDR SDRAM), organized as 4,194,304 words × 4 banks × 16 bits. W9425G6EH delivers a data bandwidth of up to 500M words per second (-4). To fully comply with the personal computer industrial standard,

4 M 횞 4 BANKS 횞 16 BITS DDR SDRAM

GENERAL DESCRIPTION W9425G6JH is a CMOS Double Data Rate synchronous dynamic random access memory (DDR SDRAM), organized as 4,194,304 words  4 banks  16 bits. W9425G6JH delivers a data bandwidth of up to 500M words per second (-4). To fully comply with the personal computer

8M x 4 BANKS x 8 BIT DDR SDRAM

文件：1.31795 Mbytes Page：47 Pages

8M x 4 BANKS x 8 BIT DDR SDRAM

文件：1.31795 Mbytes Page：47 Pages

8M x 4 BANKS x 8 BIT DDR SDRAM

文件：1.31795 Mbytes Page：47 Pages

8M x 4 BANKS x 8 BIT DDR SDRAM

文件：1.31795 Mbytes Page：47 Pages

8M x 4 BANKS x 8 BIT DDR SDRAM

文件：1.31795 Mbytes Page：47 Pages

4M x 4 BANKS x 16 BIT DDR SDRAM

文件：286.02 Kbytes Page：26 Pages

4M x 4 BANKS x 16 BIT DDR SDRAM

4M X 4 BANKS X 16 BIT DDR SDRAM

4M X 4 BANKS X 16 BIT DDR SDRAM

文件：2.80968 Mbytes Page：47 Pages

4M X 4 BANKS X 16 BITS DDR SDRAM

4 M x 4 BANKS x 16 BITS DDR SDRAM

文件：988.03 Kbytes Page：50 Pages

封装/外壳：60-TFBGA 包装：卷带（TR） 描述：IC DRAM 256MBIT PARALLEL 60TFBGA 集成电路（IC） 存储器

4 M x 4 BANKS x 16 BITS DDR SDRAM

文件：988.03 Kbytes Page：50 Pages

封装/外壳：60-TFBGA 包装：卷带（TR） 描述：IC DRAM 256MBIT PARALLEL 60TFBGA 集成电路（IC） 存储器

4 M x 4 BANKS x 16 BITS DDR SDRAM

文件：988.03 Kbytes Page：50 Pages

4 M x 4 BANKS x 16 BITS DDR SDRAM

文件：940.61 Kbytes Page：52 Pages

4 M x 4 BANKS x 16 BITS DDR SDRAM

文件：940.61 Kbytes Page：52 Pages

4 M x 4 BANKS x 16 BITS DDR SDRAM

文件：940.61 Kbytes Page：52 Pages

4 M x 4 BANKS x 16 BITS DDR SDRAM

文件：940.61 Kbytes Page：52 Pages

4 M x 4 BANKS x 16 BITS DDR SDRAM

文件：940.61 Kbytes Page：52 Pages

4 M x 4 BANKS x 16 BITS DDR SDRAM

文件：940.61 Kbytes Page：52 Pages

4 M 4 BANKS 16 BITS DDR SDRAM

文件：1.31855 Mbytes Page：52 Pages

8M 횞 4 BANKS 횞 8 BITS DDR SDRAM

文件：1.97432 Mbytes Page：53 Pages

SB® 175 Connectors Up to 280 Amps

Wires sizes from 10 to 1/0 AWG (5.3 to 50 mm²) fit in the second to largest connector in the SB® series. The 3 pole SB® 175 adds an additional position for power or grounding. All Multipole wire connector housings are genderless and mate to themselves minimizing inventory and assembly complex

SB® 175 Connectors Up to 280 Amps

Wires sizes from 10 to 1/0 AWG (5.3 to 50 mm²) fit in the second to largest connector in the SB® series. The 3 pole SB® 175 adds an additional position for power or grounding. All Multipole wire connector housings are genderless and mate to themselves minimizing inventory and assembly complex

SB® Environmental Boots

文件：556.49 Kbytes Page：4 Pages

SB® Environmental Boots

文件：556.49 Kbytes Page：4 Pages

Very High dV/dt for Snubber Applications

文件：285.3 Kbytes Page：6 Pages