包装：盒 描述：SCISSORS HOUSEHOLD 216MM W812 工具 刀，切割工具

USB Keyboard/ Device Controller

GENERAL DESCRIPTION W81281 is a low cost, high integration single-chip microcontroller with Universal Serial Bus (USB) interface for keyboard application, it includes the core of Winbond 8-bit microprocessor W78C52 which works on 6MHz. It implements a standard PC keyboard and enables connection

USB Keyboard Controller with 4 Ports Hub

GENERAL DESCRIPTION The W81282F is a highly integrated USB keyboard with 4 port hub controller chip. The W81282F has a built-in 21X8 default keyboard matrix, so that it can be directly connected to keyboard with multi-media function matrix. The keyboard matrix, vendor ID, and device ID can be eas

USB Keyboard Controller with 4 Ports Hub

GENERAL DESCRIPTION The W81282F is a highly integrated USB keyboard with 4 port hub controller chip. The W81282F has a built-in 21X8 default keyboard matrix, so that it can be directly connected to keyboard with multi-media function matrix. The keyboard matrix, vendor ID, and device ID can be eas

USB Keyboard/Device Controller

Integration of W81281 & W81181

USB Keyboard Controller with 4 Ports Hub

Integrated Circuit Audio Power Amplifier, 1W

Description: The NTE812 is a monolithic integrated circuit in a 14–Lead DIP type package designed for use in driver and power amplifier applications at frequencies from 50Hz to 40kHz. This device will deliver up to 1W RMS output power into an 8Ω load. The high input impedance and low standby curr

TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE

DESCRIPTION TURBOSWITCH 1200V drastically cuts losses in all high voltage operations which require extremely fast, soft and noise-free power diodes. Due to their optimized switching performances they also highly decrease power losses in any associated switching IGBT or MOSFET in all “freewheel mo

TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE

DESCRIPTION TURBOSWITCH 1200V drastically cuts losses in all high voltage operations which require extremely fast, soft and noise-free power diodes. Due to their optimized switching performances they also highly decrease power losses in any associated switching IGBT or MOSFET in all “freewheel mo

HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC4227 SMALL MINI MOLD

The µPA812T has built-in 2 low-voltage transistors which are designed to amplify low noise in the VHF band to the UHF band. FEATURES • Low Noise NF = 1.4 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • High Gain |S21e|2 = 12 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • A Small Mini M

HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC4227 SMALL MINI MOLD

The µPA812T has built-in 2 low-voltage transistors which are designed to amplify low noise in the VHF band to the UHF band. FEATURES • Low Noise NF = 1.4 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • High Gain |S21e|2 = 12 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • A Small Mini M