Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AC, ITO-220AC a

Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A

Low forward voltage drop, low power losses

文件：141.95 Kbytes Page：6 Pages

Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AC, ITO-220AC a

封装/外壳：TO-220-2 包装：卷带（TR） 描述：DIODE SCHOTTKY 7.5A 60V TO-220AC 分立半导体产品 二极管 - 整流器 - 单

整流器 7.5A,60V,SINGLE TRENCH SKY RECT.

Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A

Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AC, ITO-220AC a

Low forward voltage drop, low power losses

文件：141.95 Kbytes Page：6 Pages

Low forward voltage drop, low power losses

文件：141.95 Kbytes Page：6 Pages

Low forward voltage drop, low power losses

文件：141.95 Kbytes Page：6 Pages