Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AC, ITO-220AC a

Low forward voltage drop, low power losses

文件：141.95 Kbytes Page：6 Pages

Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A

封装/外壳：TO-220-2 全封装，隔离接片 包装：卷带（TR） 描述：DIODE SCHOTTKY 7.5A 60V ITO-220A 分立半导体产品 二极管 - 整流器 - 单

Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AC, ITO-220AC a

Schotty Barrier Diode

FEATURES · Low Forward Voltage Drop, Low Power losses · High Efficiency Operation · SMD APPLICATIONS · Switching Power Supply (SPS) · High Frequency Converter · DC/DC Converter

Low forward voltage drop, low power losses

文件：141.95 Kbytes Page：6 Pages