Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AC, ITO-220AC a

Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A

Trench MOS Schottky technology\nLow forward voltage drop, low power losses\nHigh efficiency operation;

Low forward voltage drop, low power losses

文件：141.95 Kbytes Page：6 Pages

封装/外壳：TO-220-2 全封装，隔离接片 包装：卷带（TR） 描述：DIODE SCHOTTKY 7.5A 60V ITO-220A 分立半导体产品 二极管 - 整流器 - 单

Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AC, ITO-220AC a

Low forward voltage drop, low power losses

文件：141.95 Kbytes Page：6 Pages

Low forward voltage drop, low power losses

文件：141.95 Kbytes Page：6 Pages

Low forward voltage drop, low power losses

文件：141.95 Kbytes Page：6 Pages