Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AC, ITO-220AC a

Schotty Barrier Diode

FEATURES · Low Forward Voltage Drop, Low Power losses · High Efficiency Operation · SMD APPLICATIONS · Switching Power Supply (SPS) · High Frequency Converter · DC/DC Converter

Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A

Trench MOS Schottky technology\nLow forward voltage drop, low power losses\nHigh efficiency operation;

Low forward voltage drop, low power losses

文件：141.95 Kbytes Page：6 Pages

封装/外壳：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB 包装：带盒（TB） 描述：DIODE SCHOTTKY 7.5A 60V TO-263AB 分立半导体产品 二极管 - 整流器 - 单

封装/外壳：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB 包装：带盒（TB） 描述：DIODE SCHOTTKY 7.5A 60V TO-263AB 分立半导体产品 二极管 - 整流器 - 单

Low forward voltage drop, low power losses

文件：141.95 Kbytes Page：6 Pages

Low forward voltage drop, low power losses

文件：141.95 Kbytes Page：6 Pages

Low forward voltage drop, low power losses

文件：141.95 Kbytes Page：6 Pages