型号 功能描述 生产厂家 企业 LOGO 操作
VFT3060G-E3

Low forward voltage drop, low power losses

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Not recommended for PCB bottom side wave mounting • Solder bath temperature 275 °C maximum

VISHAYVishay Siliconix

威世威世科技公司

VFT3060G-E3

Dual High Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Not recommended for PCB bottom side wave mounting • Solder bath temperature 275 °C maxim

VISHAYVishay Siliconix

威世威世科技公司

VFT3060G-E3

Dual High Voltage Trench MOS Barrier Schottky Rectifier

VISHAYVishay Siliconix

威世威世科技公司

封装/外壳:TO-220-3 全封装,隔离接片 包装:卷带(TR) 描述:DIODE SCHOTTKY 15A 60V ITO-220AB 分立半导体产品 二极管 - 整流器 - 阵列

ETC

知名厂家

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

文件:173.59 Kbytes Page:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

文件:173.59 Kbytes Page:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

Schotty Barrier Diode

FEATURES · Low Forward Voltage Drop, Low Power losses · High Efficiency Operation · SMD APPLICATIONS · Switching Power Supply (SPS) · High Frequency Converter · DC/DC Converter

ISC

无锡固电

Low forward voltage drop, low power losses

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Not recommended for PCB bottom side wave mounting • Solder bath temperature 275 °C maximum

VISHAYVishay Siliconix

威世威世科技公司

Dual High Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Not recommended for PCB bottom side wave mounting • Solder bath temperature 275 °C maxim

VISHAYVishay Siliconix

威世威世科技公司

VFT3060G-E3产品属性

  • 类型

    描述

  • 型号

    VFT3060G-E3

  • 制造商

    Vishay Semiconductors

  • 功能描述

    30A,60V, DUAL TRENCH SKY RECT.

更新时间:2026-3-2 15:45:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
VISHAY/威世
TO220F
23+
6000
原装现货有上库存就有货全网最低假一赔万
Vishay Semiconductor Diodes Di
22+
ITO220AB
9000
原厂渠道,现货配单
VISHAY/威世
22+
TO220F
12245
现货,原厂原装假一罚十!
VISHAY/威世
24+
TO220F
9600
原装现货,优势供应,支持实单!
VISHAY
2025+
DEFAULT
87460
VISHAY/威世
2447
TO220F
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
VISHAY/威世
23+
TO-220F
8000
只做原装现货
VISHAY/威世
24+
TO220F
54000
郑重承诺只做原装进口现货
VISHAY
25+23+
TO220F
37093
绝对原装正品全新进口深圳现货
Vishay General Semiconductor -
25+
TO-220-3 全封装 隔离接片
9350
独立分销商 公司只做原装 诚心经营 免费试样正品保证

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