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VT2045C价格
参考价格：￥4.5915
型号：VT2045CBP-M3/4W 品牌：Vishay 备注：这里有VT2045C多少钱，2025年最近7天走势，今日出价，今日竞价，VT2045C批发/采购报价，VT2045C行情走势销售排行榜，VT2045C报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
VT2045C | Dual Low-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free according to I | VishayVishay Siliconix 威世威世科技公司 |   | |
VT2045C | Dual Low-Voltage Trench MOS Barrier Schottky Rectifiers FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in | VishayVishay Siliconix 威世威世科技公司 | | |
VT2045C | Dual Low-Voltage Trench MOS Barrier Schottky Rectifier 文件：132.09 Kbytes Page：5 Pages | VishayVishay Siliconix 威世威世科技公司 | | |
VT2045C | Dual Low-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.33 V at IF = 5.0 A | VishayVishay Siliconix 威世威世科技公司 | | |
Dual Low-Voltage Trench MOS Barrier Schottky Rectifiers FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in | VishayVishay Siliconix 威世威世科技公司 | | ||
Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • TJ 200 °C max. in solar bypass mode application • Material categorization: for definitions of compliance please see www.vishay | VishayVishay Siliconix 威世威世科技公司 | | ||
Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • TJ 200 °C max. in solar bypass mode application • Material categorization: for definitions of compliance please see www.vishay. | VishayVishay Siliconix 威世威世科技公司 | | ||
Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • TJ 200 °C max. in solar bypass mode application • Material categorization: for definitions of compliance please see www.vishay | VishayVishay Siliconix 威世威世科技公司 | | ||
Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • TJ 200 °C max. in solar bypass mode application • Material categorization: for definitions of compliance please see www.vishay. | VishayVishay Siliconix 威世威世科技公司 | | ||
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLIC | VishayVishay Siliconix 威世威世科技公司 | | ||
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLIC | VishayVishay Siliconix 威世威世科技公司 | | ||
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier 文件：132.09 Kbytes Page：5 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Trench MOS Barrier Schottky Rectifier 文件：122.37 Kbytes Page：5 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Trench MOS Barrier Schottky Rectifier | VishayVishay Siliconix 威世威世科技公司 | | ||
Trench MOS Barrier Schottky Rectifier 文件：131 Kbytes Page：4 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Trench MOS Barrier Schottky Rectifier 文件：131 Kbytes Page：4 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Trench MOS Barrier Schottky Rectifier 文件：131 Kbytes Page：4 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
包装：散装 描述：DIODE SCHOTTKY 20A 45V TO-263AB 分立半导体产品 二极管 - 整流器 - 单 | ETC 知名厂家 | ETC | | |
封装/外壳：TO-220-3 包装：管件 描述：DIODE SCHOTTKY 45V 10A TO-220AB 分立半导体产品 二极管 - 整流器 - 阵列 | ETC 知名厂家 | ETC | | |
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier 文件：132.09 Kbytes Page：5 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
肖特基二极管与整流器 20A 45V DUAL TrenchMOS | VishayVishay Siliconix 威世威世科技公司 | | ||
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier 文件：132.09 Kbytes Page：5 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
CURRENT-LIMITED POWER-DISTRIBUTION SWITCHES 文件：478.84 Kbytes Page：31 Pages | TI 德州仪器 | | ||
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VT2045C产品属性
- 类型
描述
- 型号
VT2045C
- 制造商
VISHAY
- 制造商全称
Vishay Siliconix
- 功能描述
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
性 |
24+ |
NA/ |
3260 |
原装现货,当天可交货,原型号开票 |
|||
原装VISHA |
24+ |
TO-220 |
8000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
VISHAY/威世 |
23+ |
TO-220-3 |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
|||
Vishay |
25+ |
SOT-89 |
86720 |
全新原装进口现货价格优惠 本公司承诺原装正品假一赔 |
|||
Vishay Semiconductor Diodes Di |
22+ |
TO220AB |
9000 |
原厂渠道,现货配单 |
|||
VISHAY |
23+ |
TO-220 |
8650 |
受权代理!全新原装现货特价热卖! |
|||
22+ |
TO220 |
20000 |
只做原装 |
||||
Vishay Semiconductor Diodes Di |
23+ |
TO220AB |
8000 |
只做原装现货 |
|||
VISHAY |
TO220 |
100 |
原装现货 |
||||
VISHAY |
20+ |
TO220 |
20 |
原装 |
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