位置:首页 > IC中文资料第8959页 > ALN2045

型号 功能描述 生产厂家 企业 LOGO 操作
ALN2045

Internally Matched LNA Module

文件:163.28 Kbytes Page:4 Pages

ASB

ALN2045

Internally Matched LNA Module

文件:364.48 Kbytes Page:4 Pages

ASB

ALN2045

2-stage LNA

ASB

Internally Matched LNA Module

文件:750.53 Kbytes Page:4 Pages

ASB

Internally Matched LNA Module

文件:364.48 Kbytes Page:4 Pages

ASB

Internally Matched LNA Module

文件:362.24 Kbytes Page:4 Pages

ASB

Internally Matched LNA Module

文件:602.36 Kbytes Page:4 Pages

ASB

Internally Matched LNA Module

文件:737.7 Kbytes Page:4 Pages

ASB

Internally Matched LNA Module

文件:362.24 Kbytes Page:4 Pages

ASB

Internally Matched LNA Module

文件:492.36 Kbytes Page:3 Pages

ASB

Internally Matched LNA Module

ASB

Internally Matched LNA Module

文件:558.88 Kbytes Page:3 Pages

ASB

Internally Matched LNA Module

文件:492.36 Kbytes Page:3 Pages

ASB

Internally Matched LNA Module

文件:519.24 Kbytes Page:6 Pages

ASB

Internally Matched LNA Module

文件:937.36 Kbytes Page:6 Pages

ASB

2-stage LNA

ASB

Internally Matched LNA Module

文件:1.16332 Mbytes Page:6 Pages

ASB

Internally Matched LNA Module

文件:519.24 Kbytes Page:6 Pages

ASB

Internally Matched LNA Module

文件:366.02 Kbytes Page:4 Pages

ASB

Internally Matched LNA Module

文件:598.29 Kbytes Page:4 Pages

ASB

Internally Matched LNA Module

文件:712.9 Kbytes Page:4 Pages

ASB

Internally Matched LNA Module

文件:366.02 Kbytes Page:4 Pages

ASB

UHF power LDMOS transistor

DESCRIPTION Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead flange package (SOT467C) with a ceramic cap. The common source is connected to the mounting flange. FEATURES • High power gain • Easy power control • Excellent ruggedness • Source on underside el

PHILIPS

飞利浦

UHF power transistor

DESCRIPTION NPN silicon planar UHF power transistor in a 2-lead SOT390A flange package with a ceramic cap. The emitter is connected to the flange. FEATURES • Emitter ballasting resistors for optimum temperature profile • Gold metallization ensures excellent reliability • Internal input and ou

PHILIPS

飞利浦

SWITCHMODE?? Power Rectifiers

SWITCHMODE™ Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Guardring for Stress Protection • Low Forward Voltage • 150°C Operating Junction Temperature • Guaranteed Reverse Avalanche • E

MOTOROLA

摩托罗拉

SWITCHMODE??Schottky Power Rectifirer

SCHOTTKY BARRIER RECTIFIER 20 AMPERES 45 VOLTS The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use

MOTOROLA

摩托罗拉

SCHOTTKY BARRIER RECTIFIERS(20A,30-45V)

SWITCHMODE POWER RECTIFIERS D PAK SURFACE MOUNT POWER PACKAGE The D PAK Power rectifier employs the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art devices have the following features: * Low Forward Voltage * Low Switching noise * High Surge Capacity * Guara

MOSPEC

统懋

ALN2045产品属性

  • 类型

    描述

  • 型号

    ALN2045

  • 制造商

    ASB

  • 制造商全称

    ASB

  • 功能描述

    Internally Matched LNA Module

ALN2045数据表相关新闻