Surface Mount Trench MOS Barrier Schottky Rectifier

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Surface Mount Trench MOS Barrier Schottky Rectifier

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Surface-Mount TMBS짰 (Trench MOS Barrier Schottky) Rectifier

FEATURES • Low profile package • Ideal for automated placement • Trench MOS Schottky technology • Low power losses, high efficiency • Low forward voltage drop • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Material categorization: for definitions of compliance please see

Surface Mount Trench MOS Barrier Schottky Rectifier

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Surface-Mount TMBS® (Trench MOS Barrier Schottky) Rectifier

封装/外壳：DO-214AA，SMB 包装：卷带（TR）剪切带（CT） 描述：DIODE SCHOTTKY 200V 1.8A DO214AA 分立半导体产品 二极管 - 整流器 - 单

封装/外壳：DO-214AA，SMB 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：DIODE SCHOTTKY 200V 1.8A DO214AA 分立半导体产品 二极管 - 整流器 - 单

Surface Mount Trench MOS Barrier Schottky Rectifier

文件：89.18 Kbytes Page：4 Pages

Surface Mount Trench MOS Barrier Schottky Rectifier

文件：89.18 Kbytes Page：4 Pages

SURFACE MOUNT FUSES

Features • Heat resistant ceramic housing • For line or low voltage applications • Low voltage drop • Internationally approved • High pulse resistance • Also available as holder system 425 with mounted fuse 420

NPN Silicon RF Transistor

DESCRIPTION The START420 is a member of the START family that provide market with the state of the art of RF silicon process. Manufacturated in the third generation of ST proprietary bipolar process, it offers the best mix of gain and NF for given breakdown voltage(BVceo). It reaches perform

420 LED wire-to-board connector

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Supporting the Intel Celeron processor

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Celeron M Processor on 65 nm Process

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