型号 功能描述 生产厂家&企业 LOGO 操作
VSI080P06MS

N-Channel MOSFET uses advanced trench technology

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DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

杜因特深圳市杜因特半导体有限公司

DOINGTER

P-Channel Enhancement Mode Power MOSFET

Description The G080P06M uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

GOFORDGOFORD SEMICONDUCTOR

谷峰半导体

GOFORD

P-Channel Enhancement Mode Power MOSFET

Description The G080P06T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

GOFORDGOFORD SEMICONDUCTOR

谷峰半导体

GOFORD
更新时间:2025-8-5 18:20:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
VISHAY
2016+
DIP4
6528
房间原装进口现货假一赔十
VSI
2025+
SOT-223
4885
全新原厂原装产品、公司现货销售
VANGUARD
2022+
TO-251
30000
进口原装现货供应,原装 假一罚十
VANGUARD/威兆
24+
TO-251
100000
原装现货
NS/国半
24+
PLCC28
22055
郑重承诺只做原装进口现货
NS
24+
DIP-28
13
SAMPO
2020+
DIP42
1075
百分百原装正品 真实公司现货库存 本公司只做原装 可
NS/国半
23+
PLCC28
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
SAMPO
23+
DIP-40
5000
原装正品,假一罚十
SAMPO
23+
DIP42
8560
受权代理!全新原装现货特价热卖!

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