High Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free according to IEC 61249-2-21 defin

High Voltage Trench MOS Barrier Schottky Rectifier

分立 ·Trench MOS Schottky technology\n·Low forward voltage drop, low power losses\n·High efficiency operation;

High Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free according to IEC 61249-2-21 defin

High-Voltage Trench MOS Barrier Schottky Rectifier

文件：88.3 Kbytes Page：4 Pages

High-Voltage Trench MOS Barrier Schottky Rectifier

文件：89.87 Kbytes Page：4 Pages

High-Voltage Trench MOS Barrier Schottky Rectifier

文件：89.87 Kbytes Page：4 Pages

封装/外壳：DO-204AL，DO-41，轴向 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：DIODE SCHOTTKY 200V 2A DO204AL 分立半导体产品 二极管 - 整流器 - 单

封装/外壳：DO-204AL，DO-41，轴向 包装：散装 描述：DIODE SCHOTTKY 2A 200V AXIAL 分立半导体产品 二极管 - 整流器 - 单

High-Voltage Trench MOS Barrier Schottky Rectifier

文件：89.87 Kbytes Page：4 Pages

High-Voltage Trench MOS Barrier Schottky Rectifier

文件：88.3 Kbytes Page：4 Pages

High-Voltage Trench MOS Barrier Schottky Rectifier

文件：88.3 Kbytes Page：4 Pages

High-Voltage Trench MOS Barrier Schottky Rectifier

文件：89.87 Kbytes Page：4 Pages

0 to 200 kPa (0 to 29 psi) 40 mV FULL SCALE SPAN (TYPICAL)

The MPX2200 and MPX2201 series device is a silicon piezoresistive pressure sensor providing a highly accurate and linear voltage output — directly proportional to the applied pressure. The sensor is a single monolithic silicon diaphragm with the strain gauge and a thin–film resistor network integr

0 to 200 kPa (0 to 29 psi) 40 mV FULL SCALE SPAN (TYPICAL)

The MPX2200 and MPX2201 series device is a silicon piezoresistive pressure sensor providing a highly accurate and linear voltage output — directly proportional to the applied pressure. The sensor is a single monolithic silicon diaphragm with the strain gauge and a thin–film resistor network integr

0 to 200 kPa (0 to 29 psi) 40 mV FULL SCALE SPAN (TYPICAL)

The MPX2200 and MPX2201 series device is a silicon piezoresistive pressure sensor providing a highly accurate and linear voltage output — directly proportional to the applied pressure. The sensor is a single monolithic silicon diaphragm with the strain gauge and a thin–film resistor network integr

0 to 200 kPa (0 to 29 psi) 40 mV FULL SCALE SPAN (TYPICAL)

The MPX2200 and MPX2201 series device is a silicon piezoresistive pressure sensor providing a highly accurate and linear voltage output — directly proportional to the applied pressure. The sensor is a single monolithic silicon diaphragm with the strain gauge and a thin–film resistor network integr

0 to 200 kPa (0 to 29 psi) 40 mV FULL SCALE SPAN (TYPICAL)

The MPX2200 and MPX2201 series device is a silicon piezoresistive pressure sensor providing a highly accurate and linear voltage output — directly proportional to the applied pressure. The sensor is a single monolithic silicon diaphragm with the strain gauge and a thin–film resistor network integr