MOSFET

N沟道增强型功率MOSFET采用VitoMOSⅡ技术制造，具有更低的导通损耗和开关损耗以及优越的开关性能。 该产品可广泛应用于无线充及负载开关等领域。 1.VitoMOSⅡ 技术\n2.100% 雪崩测试\n3.更低的导通损耗和开关损耗\n4..无铅电镀；符合 RoHS 标准;

MOSFET

1.VitoMOSⅡ 技术\n2.100% 雪崩测试\n3.更低的导通损耗和开关损耗\n4..无铅电镀；符合 RoHS 标准;

N-Channel Logic Level PowerTrench MOSFET

General Description This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Features • 9.3 A, 30 V. RDS(ON) = 0.018 Ω @ V

Ultrahigh-Speed Switching Applications

N-Channel and P-Channel Silicon MOSFET Features • The MCH6614 incorporates two elements that are an N-channel and a P-channel MOSFETs that feature low ON resistance and high-speed switching, thereby enabling high-density mounting. • Low ON-resistance. • 2.5V drive.

SMPS PRIMARY IC

The Series STR-F6600 is specifically designed to satisfy the requirements for increased integration and reliability in off-line quasi-resonant flyback converters. The series incorporates a primary control and drive circuit with discrete avalanche-rated power MOSFETs. Covering the power range from

SMPS PRIMARY IC

Low Profile 4 Mbit/s (FIR) Infrared Transceiver Module with independent Logic Supply Voltage

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