MOSFET

N沟道增强型功率MOSFET采用Trench工艺针对更低Rds(on)和更高载流能力进行优化。该类产品非常适合要求高性能和耐用性的中低频应用，如电池保护和马达驱动等。 1.较低的导通损耗和开关损耗\n2.雪崩能力强\n3.100%雪崩测试;

N-Channel MOSFET uses advanced trench technology

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N-Channel Logic Level PowerTrench MOSFET

General Description This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Features • 9.3 A, 30 V. RDS(ON) = 0.018 Ω @ V

Ultrahigh-Speed Switching Applications

N-Channel and P-Channel Silicon MOSFET Features • The MCH6614 incorporates two elements that are an N-channel and a P-channel MOSFETs that feature low ON resistance and high-speed switching, thereby enabling high-density mounting. • Low ON-resistance. • 2.5V drive.

SMPS PRIMARY IC

The Series STR-F6600 is specifically designed to satisfy the requirements for increased integration and reliability in off-line quasi-resonant flyback converters. The series incorporates a primary control and drive circuit with discrete avalanche-rated power MOSFETs. Covering the power range from

SMPS PRIMARY IC

Low Profile 4 Mbit/s (FIR) Infrared Transceiver Module with independent Logic Supply Voltage

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