封装/外壳：SOT-227-4，miniBLOC 包装：盒 描述：IGBT MOD 600V 184A 577W SOT227 分立半导体产品 晶体管 - IGBT - 模块

IGBT 600V 184A 577W SOT-227

Insulated Gate Bipolar Transistor (Trench IGBT), 100 A

FEATURES • Trench IGBT technology with positive temperature coefficient • Speed 4 kHz to 30 kHz • Square RBSOA • 3 μs short circuit capability • FRED Pt® antiparallel diodes with ultrasoft reverse recovery • TJ maximum = 175 °C • Fully isolated package • Very low internal inductance (≤ 5 n

Insulated Gate Bipolar Transistor (Trench IGBT), 100 A

FEATURES • Trench IGBT technology with positive temperature coefficient • Square RBSOA • 3 μs short circuit capability • FRED Pt® antiparallel diodes with ultrasoft reverse recovery • TJ maximum = 175 °C • Fully isolated package • Very low internal inductance ( 5 nH typical) • Industry

Boost chopper Trench Field Stop IGBT Power Module

文件：257.75 Kbytes Page：5 Pages

Insulated Gate Bipolar Transistor (Warp 2 Speed IGBT), 100 A

文件：186.21 Kbytes Page：10 Pages

Very low internal inductance

文件：170.02 Kbytes Page：9 Pages