Very low internal inductance

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封装/外壳：SOT-227-4，miniBLOC 包装：盒 描述：IGBT MOD 600V 125A 447W SOT227 分立半导体产品 晶体管 - IGBT - 模块

MODULE IGBT SOT-227

Insulated Gate Bipolar Transistor (Trench IGBT), 100 A

FEATURES • Trench IGBT technology with positive temperature coefficient • Square RBSOA • 3 μs short circuit capability • FRED Pt® antiparallel diodes with ultrasoft reverse recovery • TJ maximum = 175 °C • Fully isolated package • Very low internal inductance ( 5 nH typical) • Industry

Insulated Gate Bipolar Transistor (Trench IGBT), 100 A

FEATURES • Trench IGBT technology with positive temperature coefficient • Speed 4 kHz to 30 kHz • Square RBSOA • 3 μs short circuit capability • FRED Pt® antiparallel diodes with ultrasoft reverse recovery • TJ maximum = 175 °C • Fully isolated package • Very low internal inductance (≤ 5 n

Boost chopper Trench Field Stop IGBT Power Module

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Insulated Gate Bipolar Transistor (Warp 2 Speed IGBT), 100 A

文件：186.21 Kbytes Page：10 Pages