位置：首页 > IC中文资料 > VS-GB100DA60UP
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
VS-GB100DA60UP | Verylowinternalinductance 文件：170.02 Kbytes Page：9 Pages | VishayVishay Siliconix 威世科技 |  |   |
VS-GB100DA60UP | 封装/外壳：SOT-227-4，miniBLOC 包装：盒 描述：IGBT MOD 600V 125A 447W SOT227 分立半导体产品 晶体管 - IGBT - 模块 | Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division |  | |
InsulatedGateBipolarTransistor(TrenchIGBT),100A FEATURES •TrenchIGBTtechnologywithpositive temperaturecoefficient •SquareRBSOA •3μsshortcircuitcapability •FREDPt®antiparalleldiodeswithultrasoft reverserecovery •TJmaximum=175°C •Fullyisolatedpackage •Verylowinternalinductance(5nHtypical) •Industry | VishayVishay Siliconix 威世科技 | | | |
InsulatedGateBipolarTransistor(TrenchIGBT),100A FEATURES •TrenchIGBTtechnologywithpositivetemperaturecoefficient •Speed4kHzto30kHz •SquareRBSOA •3μsshortcircuitcapability •FREDPt®antiparalleldiodeswithultrasoftreverserecovery •TJmaximum=175°C •Fullyisolatedpackage •Verylowinternalinductance(≤5n | VishayVishay Siliconix 威世科技 | | | |
BoostchopperTrenchFieldStopIGBTPowerModule 文件：257.75 Kbytes Page：5 Pages | MicrosemiMicrosemi Corporation 美高森美美高森美公司 |  | | |
InsulatedGateBipolarTransistor(Warp2SpeedIGBT),100A 文件：186.21 Kbytes Page：10 Pages | VishayVishay Siliconix 威世科技 | | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - |
23+ |
标准封装 |
2000 |
全新原装正品现货直销 |
|||
VishaySemiconductorDiode |
2019+ |
DoubleINT-A-PAK |
65500 |
原装正品货到付款,价格优势! |
|||
Vishay Semiconductor Diodes Di |
22+ |
Double INTAPAK |
9000 |
原厂渠道,现货配单 |
|||
Vishay |
18+ |
NA |
3000 |
进口原装正品优势供应QQ3171516190 |
|||
Vishay General Semiconductor - |
24+ |
INT-A-Pak |
9350 |
独立分销商,公司只做原装,诚心经营,免费试样正品保证 |
|||
VISHAY |
1809+ |
A-PAK |
7 |
就找我吧!--邀您体验愉快问购元件! |
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VS-GB100DA60UP规格书下载地址
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