USB-C UFP CC Controller

\n\t\t\t\t\n\t\t\t\t\tVIA Lab’s VP246 is an USB Type-C UFP CC controller. The VP246 provides the electrical measurement to support the following Type-C CC controller features;(1)\n\t\t\t\t\t (1)\n\t\t\t\t\t(1)Detect attach of USB Type-C ports(1)\n\t\t\t\t\t(2)Establish DFP and UFP roles between two • Compliant with Type-C Specification Revision 1.2\n• Detect the attachment and detachment of Type-C port\n• Support SNK-only mode.\n• Provide the detector and discharge circuit for VBUS_DET\n• Provide the control signal for Vbus sink side\n• Provide Type-C cable orientation identification\n• Provid;

N-channel silicon junction field-effect transistors

DESCRIPTION General purpose N-channel symmetrical silicon junction field-effect transistors in a plastic TO-92 variant package. FEATURES • Interchangeability of drain and source connections • High IDSSrange • Frequency up to 450 MHz. APPLICATIONS • VHF and UHF amplifiers

N-channel silicon junction field-effect transistors

DESCRIPTION General purpose N-channel symmetrical silicon junction field-effect transistors in a plastic TO-92 variant package. FEATURES • Interchangeability of drain and source connections • High IDSSrange • Frequency up to 450 MHz. APPLICATIONS • VHF and UHF amplifiers

PNP video transistor

DESCRIPTION PNP silicon transistor encapsulated in a 4-lead plastic SOT223 package. APPLICATIONS • Primarily intended for cascode output and buffer stages in high resolution colour monitors.

VHF power MOS transistor

DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS transistor encapsulated in a 4-lead, SOT121 flange package, with a ceramic cap. All leads are isolated from the flange. A marking code, showing gate-source voltage (VGS) information is provided for matched pair applications. Refer to t

Silicon Complementary Transistors Darlington Power Amplifier

Description: The NTE245 (NPN) and NTE246 (PNP) are silicon complementary Darlington transistors in a TO3 type case designed for use as output devices in general purpose amplifier applications. Features: • High DC Current Gain: hFE = 4000 Typ @ IC = 5A • Monolithic Construction with B