VHF power MOS transistor

DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS transistor encapsulated in a 4-lead, SOT121 flange package, with a ceramic cap. All leads are isolated from the flange. A marking code, showing gate-source voltage (VGS) information is provided for matched pair applications. Refer to t

VHF POWER MOSFET

DESCRIPTION: The ASI BLF246 is a vertical D-MOS transistor designed for large signal amplifier applications in the VHF frequency range. FEATURES INCLUDE: • PG = 13 dB Typical at 175 MHz • 30:1 Load VSWR Capability • Omnigold™ metalization system

RF Manual 16th edition

VHP power MOS transistor

DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS transistor encapsulated in a 4-lead, SOT121B flange package with a ceramic cap. All leads are isolated from the flange. A marking code, showing gate-source voltage (VGs) information is provided for matched pair applications. Refer to t

VHF power MOS transistor

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VHP power MOS transistor

VHF POWER MOSFET

VHF power MOS transistor

VHF push-pull power MOS transistor

DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS push-pull transistor encapsulated in an 8-lead SOT161A balanced flange package with a ceramic cap. All leads are isolated from the flange. FEATURES • High power gain • Easy power control • Good thermal stability • Gold metallizati

封装/外壳：SOT-121B 包装：卷带（TR） 描述：RF FET NCHA 65V 18DB SOT121B 分立半导体产品 晶体管 - FET，MOSFET - 射频

VHF power MOS transistor

文件：75.53 Kbytes Page：12 Pages

VHF power MOS transistor

文件：75.53 Kbytes Page：12 Pages

封装/外壳：SOT-161A 包装：托盘 描述：RF FET 2 NC 65V 19DB SOT161A 分立半导体产品 晶体管 - FET，MOSFET - 射频

VHF push-pull power MOS transistor

文件：99.39 Kbytes Page：16 Pages

VHF push-pull power MOS transistor

文件：99.39 Kbytes Page：16 Pages

N-channel silicon junction field-effect transistors

DESCRIPTION General purpose N-channel symmetrical silicon junction field-effect transistors in a plastic TO-92 variant package. FEATURES • Interchangeability of drain and source connections • High IDSSrange • Frequency up to 450 MHz. APPLICATIONS • VHF and UHF amplifiers

N-channel silicon junction field-effect transistors

DESCRIPTION General purpose N-channel symmetrical silicon junction field-effect transistors in a plastic TO-92 variant package. FEATURES • Interchangeability of drain and source connections • High IDSSrange • Frequency up to 450 MHz. APPLICATIONS • VHF and UHF amplifiers

PNP video transistor

DESCRIPTION PNP silicon transistor encapsulated in a 4-lead plastic SOT223 package. APPLICATIONS • Primarily intended for cascode output and buffer stages in high resolution colour monitors.

Silicon Complementary Transistors Darlington Power Amplifier

Description: The NTE245 (NPN) and NTE246 (PNP) are silicon complementary Darlington transistors in a TO3 type case designed for use as output devices in general purpose amplifier applications. Features: • High DC Current Gain: hFE = 4000 Typ @ IC = 5A • Monolithic Construction with B