P-Channel Enhancement-Mode Vertical DMOS FETs

Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input imped

P-Channel Enhancement-Mode Vertical DMOS FETs

P-Channel Enhancement-Mode Vertical DMOS FETs

Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input imped

P-Channel 30-V (D-S) MOSFETs

features
High-Side Switching
Low On-Resistance: 1.5

Moderate Threshold: –3.1 V
Fast Switching Speed: 17 ns
Low Input Capacitance: 60 pF benefits
Ease in Driving Switches
Low Offset (Error) Voltage
Low-Voltage Operation
High-Speed Switching
Easily Driven Without B

P-Channel 30-V (D-S) MOSFETs

features
High-Side Switching
Low On-Resistance: 1.5

Moderate Threshold: –3.1 V
Fast Switching Speed: 17 ns
Low Input Capacitance: 60 pF benefits
Ease in Driving Switches
Low Offset (Error) Voltage
Low-Voltage Operation
High-Speed Switching
Easily Driven Without B

P-Channel 30-V (D-S) MOSFETs

features
High-Side Switching
Low On-Resistance: 1.5

Moderate Threshold: –3.1 V
Fast Switching Speed: 17 ns
Low Input Capacitance: 60 pF benefits
Ease in Driving Switches
Low Offset (Error) Voltage
Low-Voltage Operation
High-Speed Switching
Easily Driven Without B

P-Channel Enhancement-Mode MOSFET Transistors

文件：250.87 Kbytes Page：4 Pages

包装：管件 描述：MOSFET P-CH 30V 0.32A TO-205 分立半导体产品 晶体管 - FET，MOSFET - 单个

MOSFET P-CH 30V 0.32A TO-205

Enhancement-Mode MOSFET Transistors

P-Channel 30-V (D-S) MOSFETs

文件：42.19 Kbytes Page：4 Pages

P-Channel Enhancement-Mode MOSFET Transistors

文件：250.87 Kbytes Page：4 Pages

P-Channel Enhancement-Mode MOSFET Transistors

文件：250.87 Kbytes Page：4 Pages

P-Channel 30-V (D-S) MOSFETs

文件：42.19 Kbytes Page：4 Pages

P-Channel Enhancement Mode Switch

文件：87.38 Kbytes Page：2 Pages

MILITARY GRADE, 14 PIN, 10 TAP TTL ACTIVES

[POLARA] MILITARY GRADE, 14 PIN, 10 TAP TTL ACTIVES

AMC0x00D Precision, ±250mV Input, Basic and Reinforced Isolated Amplifiers With Fixed Gain and Differential Output

1 Features • Linear input voltage range: ±250mV • Supply voltage range: – High-side (VDD1): 3.0V to 5.5V – Low-side (VDD2): 3.0V to 5.5V • Fixed gain: 8.2V/V • Differential analog output • Low DC errors: – Offset error: ±0.2mV (maximum) – Offset drift: ±2μV/°C (maximum) – Gain error: ±0.

AMC0x00D-Q1 Automotive, Precision, ±250mV Input, Basic and Reinforced Isolated Amplifiers With Fixed Gain and Differential Output

1 Features • AEC-Q100 qualified for automotive applications: – Temperature grade 1: –40°C to +125°C, TA • Linear input voltage range: ±250mV • Supply voltage range: – High-side (VDD1): 3.0V to 5.5V – Low-side (VDD2): 3.0V to 5.5V • Fixed gain: 8.2V/V • Differential analog output • Low DC

AMC0x00D Precision, ±250mV Input, Basic and Reinforced Isolated Amplifiers With Fixed Gain and Differential Output

1 Features • Linear input voltage range: ±250mV • Supply voltage range: – High-side (VDD1): 3.0V to 5.5V – Low-side (VDD2): 3.0V to 5.5V • Fixed gain: 8.2V/V • Differential analog output • Low DC errors: – Offset error: ±0.2mV (maximum) – Offset drift: ±2μV/°C (maximum) – Gain error: ±0.

Semi-regulated output for bus stability

文件：4.7918 Mbytes Page：14 Pages