P-Channel 30-V (D-S) MOSFETs

features
High-Side Switching
Low On-Resistance: 1.5

Moderate Threshold: –3.1 V
Fast Switching Speed: 17 ns
Low Input Capacitance: 60 pF benefits
Ease in Driving Switches
Low Offset (Error) Voltage
Low-Voltage Operation
High-Speed Switching
Easily Driven Without B

P-Channel Enhancement-Mode Vertical DMOS FETs

Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input imped

Enhancement-Mode MOSFET Transistors

P-Channel Enhancement-Mode MOSFET Transistors

文件：250.87 Kbytes Page：4 Pages

P-Channel 30-V (D-S) MOSFETs

文件：42.19 Kbytes Page：4 Pages

P-Channel 30-V (D-S) MOSFETs

features
High-Side Switching
Low On-Resistance: 1.5

Moderate Threshold: –3.1 V
Fast Switching Speed: 17 ns
Low Input Capacitance: 60 pF benefits
Ease in Driving Switches
Low Offset (Error) Voltage
Low-Voltage Operation
High-Speed Switching
Easily Driven Without B

P-Channel 30-V (D-S) MOSFETs

features
High-Side Switching
Low On-Resistance: 1.5

Moderate Threshold: –3.1 V
Fast Switching Speed: 17 ns
Low Input Capacitance: 60 pF benefits
Ease in Driving Switches
Low Offset (Error) Voltage
Low-Voltage Operation
High-Speed Switching
Easily Driven Without B

P-Channel Enhancement-Mode MOSFET Transistors

文件：250.87 Kbytes Page：4 Pages

P-Channel 30-V (D-S) MOSFETs

文件：42.19 Kbytes Page：4 Pages

N-Channel Enhancement-Mode Vertical DMOS Power FETs?

Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertexs well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedanc

TMOS FET Transistor

TMOS FET Transistor N–Channel — Enhancement

N-Channel Enhancement-Mode Vertical DMOS Power FETs?

Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertexs well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedanc

Silicon planar type

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Silicon PIN Photodiodes

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