P-ChannelEnhancement-ModeVerticalDMOSFETs

AdvancedDMOSTechnology Theseenhancement-mode(normally-off)transistorsutilizeaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesdeviceswiththepowerhandlingcapabilitiesofbipolartransistorsandwiththehighinputimped

P-Channel30-V(D-S)MOSFETs

features
High-SideSwitching
LowOn-Resistance:1.5

ModerateThreshold:–3.1V
FastSwitchingSpeed:17ns
LowInputCapacitance:60pF benefits
EaseinDrivingSwitches
LowOffset(Error)Voltage
Low-VoltageOperation
High-SpeedSwitching
EasilyDrivenWithoutB

P-Channel30-V(D-S)MOSFETs

文件：42.19 Kbytes Page：4 Pages

P-ChannelEnhancement-ModeMOSFETTransistors

文件：250.87 Kbytes Page：4 Pages

P-Channel30-V(D-S)MOSFETs

features
High-SideSwitching
LowOn-Resistance:1.5

ModerateThreshold:–3.1V
FastSwitchingSpeed:17ns
LowInputCapacitance:60pF benefits
EaseinDrivingSwitches
LowOffset(Error)Voltage
Low-VoltageOperation
High-SpeedSwitching
EasilyDrivenWithoutB

P-Channel30-V(D-S)MOSFETs

features
High-SideSwitching
LowOn-Resistance:1.5

ModerateThreshold:–3.1V
FastSwitchingSpeed:17ns
LowInputCapacitance:60pF benefits
EaseinDrivingSwitches
LowOffset(Error)Voltage
Low-VoltageOperation
High-SpeedSwitching
EasilyDrivenWithoutB

P-ChannelEnhancement-ModeMOSFETTransistors

文件：250.87 Kbytes Page：4 Pages

P-Channel30-V(D-S)MOSFETs

文件：42.19 Kbytes Page：4 Pages

MILITARYGRADE,14PIN,10TAPTTLACTIVES

[POLARA] MILITARYGRADE,14PIN,10TAPTTLACTIVES

Semi-regulatedoutputforbusstability

文件：4.7918 Mbytes Page：14 Pages

Semi-regulatedoutputforbusstability

文件：4.07405 Mbytes Page：14 Pages

WirewoundResistors,IndustrialPower,SiliconeCoated,AdjustableEdgewoundTubular

文件：178.88 Kbytes Page：6 Pages

WirewoundResistors,IndustrialPower,VitreousCoated

文件：176.54 Kbytes Page：5 Pages