位置：首页 > IC中文资料第1289页 > VNV10N07TR-E
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
?쒹MNIFET?? FULLY AUTOPROTECTED POWER MOSFET DESCRIPTION The VNB10N07, VNK10N07FM, VNP10N07FI and VNV10N07 are monolithic devices made using STMicroelectronics VIPower M0 Technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shut-down, linear current limitation and overvoltage clamp | STMICROELECTRONICS 意法半导体 |   | ||
?쒹MNIFET?? FULLY AUTOPROTECTED POWER MOSFET DESCRIPTION The VNB10N07, VNK10N07FM, VNP10N07FI and VNV10N07 are monolithic devices made using STMicroelectronics VIPower M0 Technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shut-down, linear current limitation and overvoltage clamp | STMICROELECTRONICS 意法半导体 | | ||
?쒹MNIFET?? FULLY AUTOPROTECTED POWER MOSFET DESCRIPTION The VNB10N07, VNK10N07FM, VNP10N07FI and VNV10N07 are monolithic devices made using STMicroelectronics VIPower M0 Technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shut-down, linear current limitation and overvoltage clamp | STMICROELECTRONICS 意法半导体 | | ||
?쒹MNIFET?? FULLY AUTOPROTECTED POWER MOSFET DESCRIPTION The VNP10N07 is a monolithic device made using SGS-THOMSON Vertical Intelligent Power M0 Technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shut-down, linearcurrent limitation and overvoltage clamp protect the chip in harsh | STMICROELECTRONICS 意法半导体 | | ||
?쒹MNIFET?? FULLY AUTOPROTECTED POWER MOSFET DESCRIPTION The VNB10N07, VNK10N07FM, VNP10N07FI and VNV10N07 are monolithic devices made using STMicroelectronics VIPower M0 Technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shut-down, linear current limitation and overvoltage clamp | STMICROELECTRONICS 意法半导体 | |
VNV10N07TR-E产品属性
- 类型
描述
- 型号
VNV10N07TR-E
- 功能描述
电源开关 IC - 配电 FULLY AUTOPROTECTED POWER MOSFET
- RoHS
否
- 制造商
Exar
- 输出端数量
1
- 开启电阻（最大值）
85 mOhms
- 开启时间（最大值）
400 us
- 关闭时间（最大值）
20 us
- 工作电源电压
3.2 V to 6.5 V
- 最大工作温度
+ 85 C
- 安装风格
SMD/SMT
- 封装/箱体
SOT-23-5
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST/意法半导体 |
21+ |
PowerSO-10 |
8860 |
只做原装,质量保证 |
|||
STMicroelectronics |
23+ |
SO-10 |
50000 |
只做原装正品 |
|||
ST |
20+ |
na |
65790 |
原装优势主营型号-可开原型号增税票 |
|||
ST/意法半导体 |
24+ |
PowerSO-10 |
6000 |
全新原装深圳仓库现货有单必成 |
|||
ST |
2511 |
ST-2018 |
16900 |
电子元器件采购降本30%!原厂直采,砍掉中间差价 |
|||
ST |
25+ |
ST-2018 |
16900 |
原装，请咨询 |
|||
ST/意法半导体 |
22+ |
PowerSO-10 |
20000 |
原装 品质保证 |
|||
ST/意法 |
23+ |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
||||
ST/意法半导体 |
24+ |
PowerSO-10 |
16900 |
原厂原装，价格优势，欢迎洽谈！ |
|||
STMicroelectronics |
25+ |
N/A |
18798 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
VNV10N07TR-E芯片相关品牌
VNV10N07TR-E规格书下载地址
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VNV10N07TR-E数据表相关新闻
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?VO2223A,当天发货0755-82732291全新原装现货或门市自取.
2020-7-28VO1400AEFTR?原装现货供应
VO1400AEFTR?
2019-12-26
DdatasheetPDF页码索引
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