| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
VNV10N07 | ?쒹MNIFET?? FULLY AUTOPROTECTED POWER MOSFET DESCRIPTION The VNB10N07, VNK10N07FM, VNP10N07FI and VNV10N07 are monolithic devices made using STMicroelectronics VIPower M0 Technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shut-down, linear current limitation and overvoltage clamp | STMICROELECTRONICS 意法半导体 |   | |
VNV10N07 | OMNIFET :FULLY AUTOPROTECTED POWER MOSFET • ESD PROTECTION\n• DIAGNOSTIC FEEDBACK THROUGH INPUT PIN\n• COMPATIBLE WITH STANDARD POWER MOSFET\n• LINEAR CURRENT LIMITATION\n• SHORT CIRCUIT PROTECTION• THERMAL SHUT DOWN\n• LOW CURRENT DRAWN FROM INPUT PIN\n• DIRECT ACCESS TO THE GATE OF THE POWER MOSFET (ANALOG DRIVING)\n• INTEGRATED CLAMP; | STMICROELECTRONICS 意法半导体 | | |
VNV10N07 | FULLY AUTOPROTECTED POWER MOSFET 文件：399.78 Kbytes Page：14 Pages | STMICROELECTRONICS 意法半导体 | | |
VNV10N07 | OMNIFET FULLY AUTOPROTECTED POWER MOSFET 文件：511.93 Kbytes Page：14 Pages | STMICROELECTRONICS 意法半导体 | | |
VNV10N07 | 封装/外壳：PowerSO-10 裸露底部焊盘 包装：管件 描述：IC PWR DRIVER N-CHAN 1:1 PWRSO10 集成电路（IC） 配电开关，负载驱动器 | STMICROELECTRONICS 意法半导体 | | |
封装/外壳：PowerSO-10 裸露底部焊盘 包装：卷带（TR）剪切带（CT） 描述：IC PWR DRIVER N-CHAN 1:1 PWRSO10 集成电路（IC） 配电开关，负载驱动器 | STMICROELECTRONICS 意法半导体 | | ||
?쒹MNIFET?? FULLY AUTOPROTECTED POWER MOSFET DESCRIPTION The VNB10N07, VNK10N07FM, VNP10N07FI and VNV10N07 are monolithic devices made using STMicroelectronics VIPower M0 Technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shut-down, linear current limitation and overvoltage clamp | STMICROELECTRONICS 意法半导体 | | ||
?쒹MNIFET?? FULLY AUTOPROTECTED POWER MOSFET DESCRIPTION The VNB10N07, VNK10N07FM, VNP10N07FI and VNV10N07 are monolithic devices made using STMicroelectronics VIPower M0 Technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shut-down, linear current limitation and overvoltage clamp | STMICROELECTRONICS 意法半导体 | | ||
?쒹MNIFET?? FULLY AUTOPROTECTED POWER MOSFET DESCRIPTION The VNP10N07 is a monolithic device made using SGS-THOMSON Vertical Intelligent Power M0 Technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shut-down, linearcurrent limitation and overvoltage clamp protect the chip in harsh | STMICROELECTRONICS 意法半导体 | | ||
?쒹MNIFET?? FULLY AUTOPROTECTED POWER MOSFET DESCRIPTION The VNB10N07, VNK10N07FM, VNP10N07FI and VNV10N07 are monolithic devices made using STMicroelectronics VIPower M0 Technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shut-down, linear current limitation and overvoltage clamp | STMICROELECTRONICS 意法半导体 | |
VNV10N07产品属性
- 类型
描述
- Technology：
M0-2
- RDS(on)_typ(mΩ)：
100
- General Description：
OMNIFET
- Marketing Status：
NRND
- Package：
PowerSO-10
- RoHS Compliance Grade：
Ecopack1
- Clamp Voltage_typ(V)：
70
- Drain Current Limit_typ(A)：
10
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
STMicroelectronics |
25+ |
N/A |
18746 |
样件支持,可原厂排单订货! |
|||
STMicroelectronics |
25+ |
N/A |
18798 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
|||
ST/意法半导体 |
25+ |
PowerSO-10 |
20000 |
公司只有正品,实单可谈 |
|||
ST |
20+ |
na |
65790 |
原装优势主营型号-可开原型号增税票 |
|||
STMicroelectronics |
23+ |
SO-10 |
50000 |
只做原装正品 |
|||
ST/意法半导体 |
22+ |
PowerSO-10 |
20000 |
原装 品质保证 |
|||
ST/意法半导体 |
22+ |
PowerSO-10 |
6002 |
原装正品现货 可开增值税发票 |
|||
ST |
23+ |
原厂封装 |
13528 |
振宏微原装正品,假一罚百 |
|||
ST/意法 |
2517+ |
SO-10 |
8850 |
只做原装正品现货或订货假一赔十! |
|||
ST/意法半导体 |
24+ |
PowerSO-10 |
16900 |
原厂原装，价格优势，欢迎洽谈！ |
VNV10N07规格书下载地址
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VNV10N07数据表相关新闻
VNS3NV04DPTR-E
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进口代理
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全新原装现货 支持第三方机构验证
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?VO2223A,当天发货0755-82732291全新原装现货或门市自取.
2020-7-28VO1400AEFTR?原装现货供应
VO1400AEFTR?
2019-12-26
DdatasheetPDF页码索引
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