型号 功能描述 生产厂家 企业 LOGO 操作
VNN1NV0413TR

?쏰MNIFET II?? FULLY AUTOPROTECTED POWER MOSFET

Description The VND1NV04, VNN1NV04, VNS1NV04 are monolithic devices designed in STMicroelectronics VIPower M0-3 Technology, intended for replacement of standard Power MOSFETs from DC up to 50 KHz applications. Built in thermal shutdown, linear current limitation and overvoltage clamp protect

STMICROELECTRONICS

意法半导体

VNN1NV0413TR

封装/外壳:TO-261-4,TO-261AA 包装:管件 描述:IC PWR DRIVER N-CHAN 1:1 SOT223 集成电路(IC) 配电开关,负载驱动器

STMICROELECTRONICS

意法半导体

?쏰MNIFET II?? FULLY AUTOPROTECTED POWER MOSFET

Description The VND1NV04, VNN1NV04, VNS1NV04 are monolithic devices designed in STMicroelectronics VIPower M0-3 Technology, intended for replacement of standard Power MOSFETs from DC up to 50 KHz applications. Built in thermal shutdown, linear current limitation and overvoltage clamp protect

STMICROELECTRONICS

意法半导体

?쏰MNIFET II?? FULLY AUTOPROTECTED POWER MOSFET

Description The VND1NV04, VNN1NV04, VNS1NV04 are monolithic devices designed in STMicroelectronics VIPower M0-3 Technology, intended for replacement of standard Power MOSFETs from DC up to 50 KHz applications. Built in thermal shutdown, linear current limitation and overvoltage clamp protect

STMICROELECTRONICS

意法半导体

VNN1NV0413TR产品属性

  • 类型

    描述

  • 型号

    VNN1NV0413TR

  • 功能描述

    功率驱动器IC N-Ch 40V 1.7A Omni

  • RoHS

  • 制造商

    Micrel

  • 产品

    MOSFET Gate Drivers

  • 类型

    Low Cost High or Low Side MOSFET Driver

  • 电源电压-最大

    30 V

  • 电源电压-最小

    2.75 V

  • 最大工作温度

    + 85 C

  • 安装风格

    SMD/SMT

  • 封装/箱体

    SOIC-8

  • 封装

    Tube

更新时间:2025-10-1 16:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
STM
24+
7000
ST/
24+
SOT-223
5000
全新原装正品,现货销售
SST
原厂封装
9800
原装进口公司现货假一赔百
ST/意法
24+
SOT-223
504872
免费送样原盒原包现货一手渠道联系
原装STM
19+
SOT-223
20000
ST
23+
SOT223
6000
原装正品,支持实单
ST
2023+
SOT-223
50000
原装现货
ST
2447
SOT223
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
ST/意法
24+
SOT-223
6000
只做原厂渠道 可追溯货源
STMicroelectronics
24+
SOT-223
66800
原厂授权一级代理,专注汽车、医疗、工业、新能源!

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