FULLY AUTOPROTECTED POWER MOSFET

DESCRIPTION The VNH50N04 is a monolithic device made using SGS-THOMSON Vertical Intelligent Power M0 Technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Buit-in thermal shut-down, linear current limitation and overvoltage clamp protect the chip in har

40 V – 50 A – N-channel Power MOS FET Application: Automotive

Description The NP50N04YUK is N-channel MOS Field Effect Transistors designed for high current switching applications. Features  Super low on-state resistance RDS(on) = 4.8 m MAX. (VGS = 10 V, ID = 25 A)  Non logic level drive type  Designed for automotive application and AEC-Q101 qualif

40V N-Channel Enhancement Mode MOSFET

Features  RDS(ON), VGS@10V, ID@8A

40V N-Channel Enhancement Mode MOSFET

Features  RDS(ON), VGS@10V, ID@8A

40V N-Channel Enhancement Mode MOSFET

Features  RDS(ON), VGS@10V, ID@20A

Product Scout Automotive

文件：5.67799 Mbytes Page：6 Pages