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OMNIFET FULLY AUTOPROTECTED POWER MOSFET

Description The VNP35N07-E, VNB35N07-E and VNV35N07-E are monolithic devices made using STMicroelectronics VIPower® technology, intended for replacement of standard Power MOSFETs in DC to 50 KHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp protect the

STMICROELECTRONICS

意法半导体

?쒹MNIFET?? FULLY AUTOPROTECTED POWER MOSFET

Description The VNP35N07-E, VNB35N07-E and VNV35N07-E are monolithic devices made using STMicroelectronics VIPower® technology, intended for replacement of standard Power MOSFETs in DC to 50 KHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp protect the

STMICROELECTRONICS

意法半导体

OMNIFET: fully autoprotected Power MOSFET

Description The VNP35N07-E, VNB35N07-E and VNV35N07-E are monolithic devices made using STMicroelectronics VIPower® technology, intended for replacement of standard Power MOSFETs in DC to 50 KHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp protect

STMICROELECTRONICS

意法半导体

OMNIFET FULLY AUTOPROTECTED POWER MOSFET

Description The VNP35N07-E, VNB35N07-E and VNV35N07-E are monolithic devices made using STMicroelectronics VIPower® technology, intended for replacement of standard Power MOSFETs in DC to 50 KHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp protect the

STMICROELECTRONICS

意法半导体

?쒹MNIFET?? FULLY AUTOPROTECTED POWER MOSFET

文件:139.31 Kbytes Page:13 Pages

STMICROELECTRONICS

意法半导体

更新时间:2025-12-27 16:01:01
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST
24+
D2PAK
8866
ST
23+
TO-263
5000
原装正品,假一罚十
ST/意法半导体
25+
TO-263
30000
全新原装正品支持含税
ST
25+23+
TO263
74011
绝对原装正品现货,全新深圳原装进口现货
ST/意法
24+
TO-263
9600
原装现货,优势供应,支持实单!
ST(意法半导体)
24+
D2PAK
1612
特价优势库存质量保证稳定供货
ST(意法半导体)
24+
D2PAK
5768
百分百原装正品,可原型号开票
ST
2447
NA
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
ST(意法)
25+
封装
500000
源自原厂成本,高价回收工厂呆滞
STMicroelectronics
24+
D2PAK
66800
原厂授权一级代理,专注汽车、医疗、工业、新能源!

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