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OMNIFET FULLY AUTOPROTECTED POWER MOSFET

Description The VNP35N07-E, VNB35N07-E and VNV35N07-E are monolithic devices made using STMicroelectronics VIPower® technology, intended for replacement of standard Power MOSFETs in DC to 50 KHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp protect the

STMICROELECTRONICS

意法半导体

?쒹MNIFET?? FULLY AUTOPROTECTED POWER MOSFET

Description The VNP35N07-E, VNB35N07-E and VNV35N07-E are monolithic devices made using STMicroelectronics VIPower® technology, intended for replacement of standard Power MOSFETs in DC to 50 KHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp protect the

STMICROELECTRONICS

意法半导体

OMNIFET: fully autoprotected Power MOSFET

Description The VNP35N07-E, VNB35N07-E and VNV35N07-E are monolithic devices made using STMicroelectronics VIPower® technology, intended for replacement of standard Power MOSFETs in DC to 50 KHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp protect

STMICROELECTRONICS

意法半导体

OMNIFET FULLY AUTOPROTECTED POWER MOSFET

Description The VNP35N07-E, VNB35N07-E and VNV35N07-E are monolithic devices made using STMicroelectronics VIPower® technology, intended for replacement of standard Power MOSFETs in DC to 50 KHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp protect the

STMICROELECTRONICS

意法半导体

?쒹MNIFET?? FULLY AUTOPROTECTED POWER MOSFET

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STMICROELECTRONICS

意法半导体

更新时间:2025-10-18 15:35:01
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST
23+
TO-263
5000
原装正品,假一罚十
ST/意法半导体
21+
D2PAK-3
8860
只做原装,质量保证
ST/意法半导体
25+
TO-263
30000
全新原装正品支持含税
ST/意法
24+
NA
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
ST
18+
TO-263
13364
全新原装现货,可出样品,可开增值税发票
ST/意法
25+
原厂封装
10280
原厂授权一级代理,专注军工、汽车、医疗、工业、新能源、电力!
ST
23+
TO-263
32732
原装正品代理渠道价格优势
ST/意法
24+
TO-263
9600
原装现货,优势供应,支持实单!
ST(意法半导体)
24+
D2PAK
1612
特价优势库存质量保证稳定供货
ST(意法半导体)
24+
D2PAK
5768
百分百原装正品,可原型号开票

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