VNB35N07TR价格

参考价格:¥13.9709

型号:VNB35N07TR-E 品牌:STMicroelectronics 备注:这里有VNB35N07TR多少钱,2025年最近7天走势,今日出价,今日竞价,VNB35N07TR批发/采购报价,VNB35N07TR行情走势销售排行榜,VNB35N07TR报价。
型号 功能描述 生产厂家 企业 LOGO 操作

OMNIFET FULLY AUTOPROTECTED POWER MOSFET

Description The VNP35N07-E, VNB35N07-E and VNV35N07-E are monolithic devices made using STMicroelectronics VIPower® technology, intended for replacement of standard Power MOSFETs in DC to 50 KHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp protect the

STMICROELECTRONICS

意法半导体

?쒹MNIFET?? FULLY AUTOPROTECTED POWER MOSFET

文件:139.31 Kbytes Page:13 Pages

STMICROELECTRONICS

意法半导体

OMNIFET: fully autoprotected Power MOSFET

Description The VNP35N07-E, VNB35N07-E and VNV35N07-E are monolithic devices made using STMicroelectronics VIPower® technology, intended for replacement of standard Power MOSFETs in DC to 50 KHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp protect

STMICROELECTRONICS

意法半导体

OMNIFET FULLY AUTOPROTECTED POWER MOSFET

Description The VNP35N07-E, VNB35N07-E and VNV35N07-E are monolithic devices made using STMicroelectronics VIPower® technology, intended for replacement of standard Power MOSFETs in DC to 50 KHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp protect the

STMICROELECTRONICS

意法半导体

封装/外壳:TO-263-3,D²Pak(2 引线 + 接片),TO-263AB 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:IC PWR DRIVER N-CHAN 1:1 D2PAK 集成电路(IC) 配电开关,负载驱动器

STMICROELECTRONICS

意法半导体

电源开关 IC - 配电 OMNIFETII FULLY AUTO PROTECT Pwr MOSFET

STMICROELECTRONICS

意法半导体

OMNIFET: fully autoprotected Power MOSFET

Description The VNP35N07-E, VNB35N07-E and VNV35N07-E are monolithic devices made using STMicroelectronics VIPower® technology, intended for replacement of standard Power MOSFETs in DC to 50 KHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp protect

STMICROELECTRONICS

意法半导体

?쒹MNIFET?? FULLY AUTOPROTECTED POWER MOSFET

Description The VNP35N07-E, VNB35N07-E and VNV35N07-E are monolithic devices made using STMicroelectronics VIPower® technology, intended for replacement of standard Power MOSFETs in DC to 50 KHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp protect the

STMICROELECTRONICS

意法半导体

VNB35N07TR产品属性

  • 类型

    描述

  • 型号

    VNB35N07TR

  • 功能描述

    电源开关 IC - 配电 OMNIFETII FULLY AUTO PROTECT Pwr MOSFET

  • RoHS

  • 制造商

    Exar

  • 输出端数量

    1

  • 开启电阻(最大值)

    85 mOhms

  • 开启时间(最大值)

    400 us

  • 关闭时间(最大值)

    20 us

  • 工作电源电压

    3.2 V to 6.5 V

  • 最大工作温度

    + 85 C

  • 安装风格

    SMD/SMT

  • 封装/箱体

    SOT-23-5

更新时间:2025-12-27 14:32:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST
2025+
TO-263
3685
全新原厂原装产品、公司现货销售
ST/意法
21+
NA
12500
只做全新原装公司现货特价
STM
23+
SOP
6850
只做原装正品假一赔十为客户做到零风险!!
ST
25+23+
TO263
74011
绝对原装正品现货,全新深圳原装进口现货
ST(意法)
25+
5000
只做原装 假一罚百 可开票 可售样
ST
2024+
N/A
70000
柒号只做原装 现货价秒杀全网
ST(意法半导体)
24+
D2PAK
5768
百分百原装正品,可原型号开票
ST
20+
na
65790
原装优势主营型号-可开原型号增税票
ST(意法)
24+
D2PAK
5486
只做原装现货假一罚十!价格最低!只卖原装现货
STM
SOT263
30216
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