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VNB35N07TR价格
参考价格：￥13.9709
型号：VNB35N07TR-E 品牌：STMicroelectronics 备注：这里有VNB35N07TR多少钱，2025年最近7天走势，今日出价，今日竞价，VNB35N07TR批发/采购报价，VNB35N07TR行情走势销售排行榜，VNB35N07TR报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
OMNIFET FULLY AUTOPROTECTED POWER MOSFET Description The VNP35N07-E, VNB35N07-E and VNV35N07-E are monolithic devices made using STMicroelectronics VIPower® technology, intended for replacement of standard Power MOSFETs in DC to 50 KHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp protect the | STMICROELECTRONICS 意法半导体 |   | ||
?쒹MNIFET?? FULLY AUTOPROTECTED POWER MOSFET 文件：139.31 Kbytes Page：13 Pages | STMICROELECTRONICS 意法半导体 | | ||
OMNIFET: fully autoprotected Power MOSFET Description The VNP35N07-E, VNB35N07-E and VNV35N07-E are monolithic devices made using STMicroelectronics VIPower® technology, intended for replacement of standard Power MOSFETs in DC to 50 KHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp protect | STMICROELECTRONICS 意法半导体 | | ||
OMNIFET FULLY AUTOPROTECTED POWER MOSFET Description The VNP35N07-E, VNB35N07-E and VNV35N07-E are monolithic devices made using STMicroelectronics VIPower® technology, intended for replacement of standard Power MOSFETs in DC to 50 KHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp protect the | STMICROELECTRONICS 意法半导体 | | ||
封装/外壳：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC PWR DRIVER N-CHAN 1:1 D2PAK 集成电路（IC） 配电开关，负载驱动器 | STMICROELECTRONICS 意法半导体 | | ||
电源开关 IC - 配电 OMNIFETII FULLY AUTO PROTECT Pwr MOSFET | STMICROELECTRONICS 意法半导体 | | ||
OMNIFET: fully autoprotected Power MOSFET Description The VNP35N07-E, VNB35N07-E and VNV35N07-E are monolithic devices made using STMicroelectronics VIPower® technology, intended for replacement of standard Power MOSFETs in DC to 50 KHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp protect | STMICROELECTRONICS 意法半导体 | | ||
?쒹MNIFET?? FULLY AUTOPROTECTED POWER MOSFET Description The VNP35N07-E, VNB35N07-E and VNV35N07-E are monolithic devices made using STMicroelectronics VIPower® technology, intended for replacement of standard Power MOSFETs in DC to 50 KHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp protect the | STMICROELECTRONICS 意法半导体 | |
VNB35N07TR产品属性
- 类型
描述
- 型号
VNB35N07TR
- 功能描述
电源开关 IC - 配电 OMNIFETII FULLY AUTO PROTECT Pwr MOSFET
- RoHS
否
- 制造商
Exar
- 输出端数量
1
- 开启电阻（最大值）
85 mOhms
- 开启时间（最大值）
400 us
- 关闭时间（最大值）
20 us
- 工作电源电压
3.2 V to 6.5 V
- 最大工作温度
+ 85 C
- 安装风格
SMD/SMT
- 封装/箱体
SOT-23-5
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST(意法半导体) |
24+ |
D2PAK |
5768 |
百分百原装正品,可原型号开票 |
|||
ST/意法 |
24+ |
NA |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
ST/意法 |
25+ |
D2PAK |
65248 |
百分百原装现货 实单必成 |
|||
ST/意法 |
22+ |
SOT263 |
100000 |
代理渠道/只做原装/可含税 |
|||
ST/意法 |
24+ |
D2PAK |
990000 |
明嘉莱只做原装正品现货 |
|||
ST |
21+ |
TO-263 |
5907 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
ST |
23+ |
TO-263-3 |
296 |
正规渠道,只有原装! |
|||
ST(意法) |
2526+ |
D2PAK |
50000 |
只做原装优势现货库存,渠道可追溯 |
|||
NA |
23+ |
NA |
26094 |
10年以上分销经验原装进口正品,做服务型企业 |
|||
ST/意法半导体 |
23+ |
N/A |
20000 |
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VNB35N07TR规格书下载地址
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DdatasheetPDF页码索引
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